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FDD6N20TM PDF预览

FDD6N20TM

更新时间： 2024-11-06 11:13:03
品牌 Logo 应用领域
安森美 - ONSEMI 开关脉冲晶体管
页数 文件大小 规格书
10页 729K
描述
功率 MOSFET，N 沟道，UniFETTM，200V，4.5A，800mΩ，DPAK

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中文翻译

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FDD6N20TM 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PSSO-G2Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
风险等级：0.91雪崩能效等级（Eas）：60 mJ
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：200 V
最大漏极电流 (Abs) (ID)：4.5 A最大漏极电流 (ID)：4.5 A
最大漏源导通电阻：0.8 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PSSO-G2JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：40 W最大脉冲漏极电流 (IDM)：18 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：Tin (Sn)
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

FDD6N20TM 数据手册

 浏览型号FDD6N20TM的Datasheet PDF文件第2页浏览型号FDD6N20TM的Datasheet PDF文件第3页浏览型号FDD6N20TM的Datasheet PDF文件第4页浏览型号FDD6N20TM的Datasheet PDF文件第5页浏览型号FDD6N20TM的Datasheet PDF文件第6页浏览型号FDD6N20TM的Datasheet PDF文件第7页 
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中文翻译

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FDD6N20TM 替代型号

型号 品牌 替代类型 描述 数据表
IRLR230ATM FAIRCHILD

功能相似

 Power Field-Effect Transistor, 7.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Met
H5N2004DS RENESAS

功能相似

 Silicon N Channel MOS FET High Speed Power Switching
2SK2887 ROHM

功能相似

 Switching (200V, 3A)

与FDD6N20TM相关器件

型号 品牌 获取价格 描述 数据表
FDD6N25 FAIRCHILD

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 		250V N-Channel MOSFET
FDD6N25TF FAIRCHILD

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 		250V N-Channel MOSFET
FDD6N25TM FAIRCHILD

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 		250V N-Channel MOSFET
FDD6N25TM ONSEMI

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 		功率 MOSFET，N 沟道，UniFETTM，250 V，4.4 A，1.1 Ω，DPA
FDD6N50 FAIRCHILD

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 		500V N-Channel MOSFET
FDD6N50F FAIRCHILD

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 		N-Channel MOSFET 500V, 5.5A, 1.15ヘ
FDD6N50FTF FAIRCHILD

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 		N-Channel MOSFET 500V, 5.5A, 1.15ヘ
FDD6N50FTM FAIRCHILD

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 		N-Channel MOSFET 500V, 5.5A, 1.15ヘ
FDD6N50FTM ONSEMI

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 		功率 MOSFET，N 沟道，UniFETTM，FRFET®，500 V，5.5 A，1.
FDD6N50TF FAIRCHILD

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 		500V N-Channel MOSFET

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