Datasheet > FDD6N50TM-WS

FDD6N50TM-WS

更新时间： 2024-11-10 01:17:47

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
9页	463K
描述
N-Channel UniFETTM MOSFET500 V, 6 A, 900 mÎ©

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数据手册

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FDD6N50TM-WS 数据手册

November 2013

FDD6N50 / FDU6N50

N-Channel UniFET MOSFET

500 V, 6 A, 900 mΩ

Features

Description

•

R_DS(on)= 900 mΩ (Max.) @ V_GS= 10 V, I_D= 3 A

Low Gate Charge (Typ. 12.8 nC)

Low C_rss(Typ. 9 pF)

UniFET^TMMOSFET is Fairchild Semiconductor’s high voltage

MOSFET family based on planar stripe and DMOS technology.

This MOSFET is tailored to reduce on-state resistance, and to

provide better switching performance and higher avalanche

energy strength. This device family is suitable for switching

power converter applications such as power factor correction

(PFC), flat panel display (FPD) TV power, ATX and electronic

lamp ballasts.

100% Avalanche Tested

Improved dv/dt Capability

Applications

•

LCD/LED/PDP TV

Lighting

Uninterruptible Power Supply

AC-DC Power Supply

I-PAK

D-PAK

Absolute Maximum Ratings T_C= 25^oC unless otherwise noted.

FDD6N50TM /

FDD6N50TM_WS /

FDU6N50TU

Symbol

V_DSS

Parameter

Unit

Drain-Source Voltage

Drain Current

500

I_D

- Continuous (T_C= 25°C)

- Continuous (T_C= 100°C)

3.8

(Note 1)

I_DM

Drain Current

- Pulsed

V_GSS

E_AS

I_AR

Gate-Source voltage

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

270

E_AR

dv/dt

P_D

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

8.9

4.5

V/ns

Power Dissipation

(T_C= 25°C)

- Derate Above 25°C

0.71

W/°C

_J,T_STG

Operating and Storage Temperature Range

-55 to +150

°C

T_L

Maximum Lead Temperature for Soldering, 1/8” from Case for

5 Seconds

300

°C

Thermal Characteristics

FDD6N50TM /

FDD6N50TM_WS /

FDU6N50TU

Symbol

Parameter

Unit

R_θJC

R_θJA

Thermal Resistance, Junction-to-Case, Max.

Thermal Resistance, Junction-to-Ambient, Max.

1.4

°C/W

www.fairchildsemi.com

FDD6N50 / FDU6N50 Rev. C1

12 3 4 5 6 7...9

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