是否无铅: | 不含铅 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PSSO-G4 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
Factory Lead Time: | 8 weeks | 风险等级: | 0.94 |
Samacsys Confidence: | 4 | Samacsys Status: | Released |
Samacsys PartID: | 969637 | Samacsys Pin Count: | 5 |
Samacsys Part Category: | Transistor | Samacsys Package Category: | Other |
Samacsys Footprint Name: | Dual DPAK 4L | Samacsys Released Date: | 2019-02-04 23:40:49 |
Is Samacsys: | N | 雪崩能效等级(Eas): | 29 mJ |
外壳连接: | DRAIN | 配置: | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE |
最小漏源击穿电压: | 40 V | 最大漏极电流 (Abs) (ID): | 9 A |
最大漏极电流 (ID): | 20 A | 最大漏源导通电阻: | 0.024 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSSO-G4 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 2 | 端子数量: | 4 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL AND P-CHANNEL | 最大功率耗散 (Abs): | 3.1 W |
最大脉冲漏极电流 (IDM): | 55 A | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子面层: | Tin (Sn) | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FDD8424H_11 | FAIRCHILD |
获取价格 |
Dual N & P-Channel PowerTrench® MOSFET N-Cha | |
FDD8424H_F085 | FAIRCHILD |
获取价格 |
40V Dual N & P-Channel PowerTrench® MOSFET. (Transferred to alternate site | |
FDD8424H_F085A_13 | FAIRCHILD |
获取价格 |
Dual N & P-Channel PowerTrench® MOSFET N-Cha | |
FDD8424H-F085A | ONSEMI |
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40 V/-40 V、26/-20 A、24/54 mΩ、DPAK(4 引脚)N 沟道和 | |
FDD8426H | FAIRCHILD |
获取价格 |
Dual N & P-Channel PowerTrench® MOSFET N-Chan | |
FDD8444 | FAIRCHILD |
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N-Channel PowerTrench㈢ MOSFET 40V, 50A, 5.2mз | |
FDD8444 | ONSEMI |
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40V N沟道PowerTrench® MOSFET | |
FDD8444_06 | FAIRCHILD |
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N-Channel PowerTrench㈢ MOSFET 40V, 50A, 5.2mз | |
FDD8444_10 | FAIRCHILD |
获取价格 |
N-Channel PowerTrench® MOSFET 40V, 50A, 5.2m | |
FDD8444_F085 | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 20A I(D), 40V, 0.0052ohm, 1-Element, N-Channel, Silicon, Me |