Datasheet > FDD7N60NZ_10

FDD7N60NZ_10

更新时间： 2024-11-18 12:23:35

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
9页	263K
描述
N-Channel MOSFET 600V, 5.5A, 1.25ï

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FDD7N60NZ_10 数据手册

December 2010



UniFET-II

FDD7N60NZ / FDU7N60NZ

N-Channel MOSFET

600V, 5.5A, 1.25

Features

Description

•

R_DS(on)= 1.05 ( Typ.)@ V_GS= 10V, I_D= 2.75A

Low Gate Charge ( Typ. 13nC)

Low C_rss( Typ. 7pF)

These N-Channel enhancement mode power field effect tran-

sistors are produced using Fairchild’s proprietary, planar stripe,

DMOS technology.

This advance technology has been especially tailored to mini-

mize on-state resistance, provide superior switching perfor-

mance, and withstand high energy pulse in the avalanche and

commutation mode. These devices are well suited for high effi-

cient switching mode power supplies and active power factor

correction.

Fast Switching

100% Avalanche Tested

Improved dv/dt Capability

•

ESD Improved Capability

RoHS Compliant



I-PAK

D-PAK

MOSFET Maximum Ratings T_C= 25^oC unless otherwise noted*

Symbol

V_DSS

V_GSS

Parameter

FDD7N60NZ/FDU7N60NZ Units

Drain to Source Voltage

Gate to Source Voltage

600

±25

-Continuous (T_C= 25^oC)

-Continuous (T_C= 100^oC)

- Pulsed

5.5

I_D

Drain Current

3.3

I_DM

Drain Current

 (Note 1)

(Note 2)

 (Note 1)

 (Note 3)

E_AS

I_AR

Single Pulsed Avalanche Energy

Avalanche Current

347

5.5

E_AR

dv/dt

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

12.5

V/ns

(T_C= 25^oC)

- Derate above 25^oC

P_D

Power Dissipation

0.7

W/^oC

^oC

T_J, T_STG

T_L

Operating and Storage Temperature Range

-55 to +150

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300

^oC

Thermal Characteristics

Symbol

Parameter

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

Units

FDD7N60NZ/FDU7N60NZ

R_JC

R_JA

1.4

^oC/W

FDD7N60NZ / FDU7N60NZ Rev. A

www.fairchildsemi.com

12 3 4 5 6 7...9

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