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FDD8447L PDF预览

FDD8447L

更新时间: 2024-11-09 04:18:35
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关脉冲PC
页数 文件大小 规格书
6页 536K
描述
N-Channel PowerTrench MOSFET 40V, 54A, 8.5mOhm

FDD8447L 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:DPAK
包装说明:ROHS COMPLIANT, DPAK-3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.31
Samacsys Confidence:4Samacsys Status:Released
Samacsys PartID:167021Samacsys Pin Count:3
Samacsys Part Category:MOSFET (N-Channel)Samacsys Package Category:Other
Samacsys Footprint Name:FDD8447L-1Samacsys Released Date:2015-07-12 18:27:54
Is Samacsys:N雪崩能效等级(Eas):153 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:40 V最大漏极电流 (Abs) (ID):54 A
最大漏极电流 (ID):21 A最大漏源导通电阻:0.0085 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-252
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):45 W最大脉冲漏极电流 (IDM):100 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FDD8447L 数据手册

 浏览型号FDD8447L的Datasheet PDF文件第2页浏览型号FDD8447L的Datasheet PDF文件第3页浏览型号FDD8447L的Datasheet PDF文件第4页浏览型号FDD8447L的Datasheet PDF文件第5页浏览型号FDD8447L的Datasheet PDF文件第6页 
May 2008  
FDD8447L  
40V N-Channel PowerTrench® MOSFET  
40V, 50A, 8.5mΩ  
Features  
General Description  
„ Max rDS(on) = 8.5mat VGS = 10V, ID = 14A  
„ Max rDS(on) = 11.0mat VGS = 4.5V, ID = 11A  
„ Fast Switching  
This N-Channel MOSFET has been produced using Fairchild  
Semiconductor’s proprietary PowerTrench® technology to  
deliver low rDS(on) and optimized BVDSS capability to offer  
superior performance benefit in the application.  
„ RoHS Compliant  
Applications  
„ Inverter  
„ Power Supplies  
D
D
G
G
S
D-PAK  
(TO-252)  
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted  
Symbol  
VDS  
VGS  
Parameter  
Ratings  
40  
Units  
Drain to Source Voltage  
Gate to Source Voltage  
V
V
±20  
Drain Current -Continuous (Package limited)  
-Continuous (Silicon limited)  
-Continuous  
TC= 25°C  
TC= 25°C  
TA= 25°C  
50  
57  
ID  
A
(Note 1a)  
15.2  
100  
-Pulsed  
IS  
Max Pulse Diode Current  
Drain-Source Avalanche Energy  
100  
A
EAS  
(Note 3)  
153  
mJ  
Power Dissipation  
TC= 25°C  
TA= 25°C  
TA= 25°C  
44  
PD  
(Note 1a)  
3.1  
W
(Note 1b)  
1.3  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
-55 to +150  
°C  
Thermal Characteristics  
RθJC  
RθJA  
RθJA  
Thermal Resistance, Junction to Case  
2.8  
40  
96  
°C/W  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Ambient  
(Note 1a)  
(Note 1b)  
Package Marking and Ordering Information  
Device Marking  
Device  
Package  
Reel Size  
13’’  
Tape Width  
12mm  
Quantity  
FDD8447L  
FDD8447L  
D-PAK(TO-252)  
2500 units  
1
©2008 Fairchild Semiconductor Corporation  
FDD8447L Rev.C3  
www.fairchildsemi.com  

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