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FDD7N60NZTM PDF预览

FDD7N60NZTM

更新时间： 2024-11-22 11:12:23
品牌 Logo 应用领域
安森美 - ONSEMI 开关脉冲晶体管
页数 文件大小 规格书
11页 773K
描述
功率 MOSFET，N 沟道，UniFETTM II，600 V，5.5 A，1.25 Ω，DPAK

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中文翻译

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FDD7N60NZTM 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PSSO-G2Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：1 week风险等级：0.98
雪崩能效等级（Eas）：347 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：600 V
最大漏极电流 (Abs) (ID)：5.5 A最大漏极电流 (ID)：5.5 A
最大漏源导通电阻：1.25 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-252AAJESD-30 代码：R-PSSO-G2
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：2
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：90 W
最大脉冲漏极电流 (IDM)：22 A子类别：FET General Purpose Power
表面贴装：YES端子面层：Tin (Sn)
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

FDD7N60NZTM 数据手册

 浏览型号FDD7N60NZTM的Datasheet PDF文件第2页浏览型号FDD7N60NZTM的Datasheet PDF文件第3页浏览型号FDD7N60NZTM的Datasheet PDF文件第4页浏览型号FDD7N60NZTM的Datasheet PDF文件第5页浏览型号FDD7N60NZTM的Datasheet PDF文件第6页浏览型号FDD7N60NZTM的Datasheet PDF文件第7页 
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Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers  
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor  
product management systems do not have the ability to manage part nomenclature that utilizes an underscore  
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain  
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated  
device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please  
email any questions regarding the system integration to Fairchild_questions@onsemi.com.  
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number  
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right  
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