Datasheet > FDD8424H-F085A

FDD8424H-F085A

更新时间： 2024-11-07 11:12:55

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
12页	589K
描述
40 V/-40 V、26/-20 A、24/54 mΩ、DPAK（4 引脚）N 沟道和 P 沟道 PowerTrench®

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FDD8424H-F085A 技术参数

是否无铅：	不含铅	生命周期：	End Of Life
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	6.02	最大漏极电流 (Abs) (ID)：	20 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL AND P-CHANNEL
最大功率耗散 (Abs)：	35 W	子类别：	Other Transistors
表面贴装：	YES	Base Number Matches：	1

FDD8424H-F085A 数据手册

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与FDD8424H-F085A相关器件

型号	品牌	获取价格	描述	数据表
FDD8426H	FAIRCHILD	获取价格	Dual N & P-Channel PowerTrench® MOSFET N-Chan
FDD8444	FAIRCHILD	获取价格	N-Channel PowerTrench㈢ MOSFET 40V, 50A, 5.2mз
FDD8444	ONSEMI	获取价格	40V N沟道PowerTrench® MOSFET
FDD8444_06	FAIRCHILD	获取价格	N-Channel PowerTrench㈢ MOSFET 40V, 50A, 5.2mз
FDD8444_10	FAIRCHILD	获取价格	N-Channel PowerTrenchÂ® MOSFET 40V, 50A, 5.2m
FDD8444_F085	FAIRCHILD	获取价格	Power Field-Effect Transistor, 20A I(D), 40V, 0.0052ohm, 1-Element, N-Channel, Silicon, Me
FDD8444-F085	ONSEMI	获取价格	N 沟道 PowerTrench® 40V, 50A, 5.2mΩ
FDD8444-F085P	ONSEMI	获取价格	N 沟道 PowerTrench® 40V, 50A, 5.2mΩ
FDD8444L	FAIRCHILD	获取价格	N-Channel PowerTrench㈢ MOSFET
FDD8444L_F085_09	FAIRCHILD	获取价格	N-Channel PowerTrenchÂ® MOSFET 40V, 50A, 6.0m

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