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FDD8453LZ

更新时间: 2024-09-27 04:18:35
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
7页 277K
描述
N-Channel PowerTrench㈢ MOSFET 40V, 50A, 6.7mヘ

FDD8453LZ 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:DPAK
包装说明:ROHS COMPLIANT, TO-252, D-PAK-3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.71
雪崩能效等级(Eas):253 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:40 V
最大漏极电流 (Abs) (ID):75 A最大漏极电流 (ID):50 A
最大漏源导通电阻:0.0106 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252AAJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):65 W
最大脉冲漏极电流 (IDM):100 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FDD8453LZ 数据手册

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September 2007  
FDD8453LZ  
tm  
N-Channel PowerTrench® MOSFET  
40V, 50A, 6.7mΩ  
Features  
General Description  
„ Max rDS(on) = 6.7mat VGS = 10V, ID = 15A  
„ Max rDS(on) = 8.7mat VGS = 4.5V, ID = 13A  
„ HBM ESD protection level >7kV typical (Note 4)  
„ RoHS Compliant  
This N-Channel MOSFET is produced using Fairchild  
Semiconductor’s advanced PowerTrench® process that has  
been especially tailored to minimize the on-state resistance and  
switching loss. G-S zener has been added to enhance ESD  
voltage level.  
Applications  
„ Inverter  
„ Synchronous Rectifier  
D
D
G
G
S
D-PAK  
(TO-252)  
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted  
Symbol  
VDS  
VGS  
Parameter  
Ratings  
40  
Units  
Drain to Source Voltage  
Gate to Source Voltage  
V
V
±20  
Drain Current -Continuous (Package limited)  
-Continuous (Silicon limited)  
-Continuous  
TC = 25°C  
C = 25°C  
50  
T
75  
ID  
A
TA = 25°C  
(Note 1a)  
(Note 3)  
(Note 1a)  
16.4  
100  
-Pulsed  
EAS  
Single Pulse Avalanche Energy  
Power Dissipation  
253  
mJ  
W
TC = 25°C  
TA = 25°C  
65  
PD  
Power Dissipation  
3.1  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
-55 to +150  
°C  
Thermal Characteristics  
RθJC  
RθJA  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
1.9  
40  
°C/W  
(Note 1a)  
Package Marking and Ordering Information  
Device Marking  
Device  
Package  
Reel Size  
13’’  
Tape Width  
12mm  
Quantity  
FDD8453LZ  
FDD8453LZ  
D-PAK (TO-252)  
2500 units  
1
©2007 Fairchild Semiconductor Corporation  
FDD8453LZ Rev.C  
www.fairchildsemi.com  

FDD8453LZ 替代型号

型号 品牌 替代类型 描述 数据表
TK50P04M1 TOSHIBA

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