5秒后页面跳转
捷配首页

Datasheet > FDD850N10LD
FDD850N10LD PDF预览

FDD850N10LD

更新时间： 2024-11-10 11:13:03
品牌 Logo 应用领域
安森美 - ONSEMI 开关脉冲晶体管二极管
页数 文件大小 规格书
13页 1124K
描述
BoostPak（N 沟道，PowerTrench® MOSFET + 二极管），100 V，15.3A，75 mΩ

阅读下载

中文翻译

获取价格

FDD850N10LD 技术参数

是否无铅：不含铅生命周期：End Of Life
包装说明：SMALL OUTLINE, R-PSSO-G4Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：1 week风险等级：5.66
Is Samacsys：N雪崩能效等级（Eas）：41 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：100 V最大漏极电流 (Abs) (ID)：15.3 A
最大漏极电流 (ID)：15.3 A最大漏源导通电阻：0.096 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-252AD
JESD-30 代码：R-PSSO-G4JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：4工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：42 W最大脉冲漏极电流 (IDM)：46 A
子类别：FET General Purpose Power表面贴装：YES
端子面层：Tin (Sn)端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

FDD850N10LD 数据手册

 浏览型号FDD850N10LD的Datasheet PDF文件第2页浏览型号FDD850N10LD的Datasheet PDF文件第3页浏览型号FDD850N10LD的Datasheet PDF文件第4页浏览型号FDD850N10LD的Datasheet PDF文件第5页浏览型号FDD850N10LD的Datasheet PDF文件第6页浏览型号FDD850N10LD的Datasheet PDF文件第7页 
Is Now Part of  
To learn more about ON Semiconductor, please visit our website at  
www.onsemi.com  
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers  
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor  
product management systems do not have the ability to manage part nomenclature that utilizes an underscore  
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain  
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated  
device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please  
email any questions regarding the system integration to Fairchild_questions@onsemi.com.  
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number  
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right  
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON  
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON  
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s  
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA  
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended  
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out  
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor  
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
1234567...13

中文翻译

下载PDF

FDD850N10LD 替代型号

型号 品牌 替代类型 描述 数据表
FDD850N10L FAIRCHILD

功能相似

 N-Channel PowerTrench MOSFET 100 V, 15.7 A, 75 m Ohm

与FDD850N10LD相关器件

型号 品牌 获取价格 描述 数据表
FDD8580 FAIRCHILD

获取价格

 		N-Channel PowerTrench MOSFET 20V, 35A, 9mohm
FDD8586 FAIRCHILD

获取价格

 		N-Channel PowerTrench MOSFET 20V, 35A, 5.5mOHM
FDD8586 ROCHESTER

获取价格

 		35A, 20V, 0.0055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT, DPAK-3
FDD8586 UMW

获取价格

 		种类:N-Channel;漏源电压（Vdss）:25V;持续漏极电流（Id）（在25°C时
FDD86067-F085 ONSEMI

获取价格

 		N-Channel PowerTrench® MOSFET 100V, 94A, 5.7
FDD86069-F085 ONSEMI

获取价格

 		N-Channel PowerTrench® MOSFET 100 V, 51 A, 10
FDD86080-F085 ONSEMI

获取价格

 		N-Channel PowerTrench® MOSFET 100 V, 33 A, 17
FDD86081-F085 ONSEMI

获取价格

 		N-Channel PowerTrench® MOSFET 100 V, 21 A, 31
FDD86102 FAIRCHILD

获取价格

 		N-Channel PowerTrench® MOSFET 100 V, 36 A, 2
FDD86102 ONSEMI

获取价格

 		N 沟道，屏蔽门极，PowerTrench® MOSFET，100 V，36 A，24 m

与FDD850N10LD相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证