Datasheet > FDD8453LZ_F085_12

FDD8453LZ_F085_12

更新时间： 2024-11-21 12:00:07

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
7页	417K
描述
N-Channel Power TrenchÂ® MOSFET 40V, 50A, 6.5mÎ©

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FDD8453LZ_F085_12 数据手册

Aug 2012

FDD8453LZ_F085

N-Channel Power Trench MOSFET

40V, 50A, 6.5mΩ

Features

Typ r_DS(on)= 5mΩ at V_GS= 10V, I_D= 15A

General Description

Typ r_DS(on)= 6mΩ at V_GS= 4.5V, I_D= 13A

This N-Channel MOSFET is produced using Fairchild

Semiconductor’s advanced PowerTrench® process that

has been especially tailored to minimize the on-state

resistance and switching loss. G-S zener has been added

HBM ESD protection level > 7kv typical

RoHS Compliant

Qualified to AEC Q101

to enhance ESD voltage level.

Applications

Inverter

Synchronous Rectifier

Symbol

Package

D-PAK

(TO-252)

FDD8453LZ_F085 Rev. C1

www.fairchildsemi.com

12 3 4 5 6 7

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