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FDD86102 PDF预览

FDD86102

更新时间： 2024-11-22 11:15:23
品牌 Logo 应用领域
安森美 - ONSEMI 开关脉冲晶体管
页数 文件大小 规格书
8页 581K
描述
N 沟道，屏蔽门极，PowerTrench® MOSFET，100 V，36 A，24 mΩ

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中文翻译

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FDD86102 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：DPAK-3Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：26 weeks风险等级：0.95
Is Samacsys：N雪崩能效等级（Eas）：121 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：100 V最大漏极电流 (Abs) (ID)：42 A
最大漏极电流 (ID)：8 A最大漏源导通电阻：0.024 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-252
JESD-30 代码：R-PSSO-G2JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：62 W最大脉冲漏极电流 (IDM)：40 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：Tin (Sn)
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

FDD86102 数据手册

 浏览型号FDD86102的Datasheet PDF文件第2页浏览型号FDD86102的Datasheet PDF文件第3页浏览型号FDD86102的Datasheet PDF文件第4页浏览型号FDD86102的Datasheet PDF文件第5页浏览型号FDD86102的Datasheet PDF文件第6页浏览型号FDD86102的Datasheet PDF文件第7页 
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中文翻译

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FDD86102 替代型号

型号 品牌 替代类型 描述 数据表
FDD050N03B FAIRCHILD

功能相似

 N-Channel PowerTrench MOSFET

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FDD86102LZ_12 FAIRCHILD

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 		屏蔽门极，PowerTrench® MOSFET，N 沟道，100 V，50 A， 10.
FDD86113LZ FAIRCHILD

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 		N-Channel Shielded Gate PowerTrench® MOSFET
FDD86113LZ ONSEMI

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 		N 沟道，屏蔽门极，PowerTrench® MOSFET，100V，5.5 A，104
FDD86113LZ UMW

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 		种类:N-Channel;漏源电压（Vdss）:100V;持续漏极电流（Id）（在25°C
FDD86250 FAIRCHILD

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 		FDD86250 N-Channel Shielded Gate PowerTrenchÂ
FDD86250 ONSEMI

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 		N 沟道，屏蔽门极，PowerTrench® MOSFET，150 V，51 A，22 m

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