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FDD86381-F085 PDF预览

FDD86381-F085

更新时间: 2024-11-26 11:16:11
品牌 Logo 应用领域
安森美 - ONSEMI 开关晶体管
页数 文件大小 规格书
7页 536K
描述
N 沟道,PowerTrench® MOSFET,80 V,25 A,21 mΩ

FDD86381-F085 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:SMALL OUTLINE, R-PSSO-G2Reach Compliance Code:not_compliant
风险等级:1.51雪崩能效等级(Eas):14 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:80 V最大漏极电流 (ID):25 A
最大漏源导通电阻:0.021 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252JESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
参考标准:AEC-Q101表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FDD86381-F085 数据手册

 浏览型号FDD86381-F085的Datasheet PDF文件第2页浏览型号FDD86381-F085的Datasheet PDF文件第3页浏览型号FDD86381-F085的Datasheet PDF文件第4页浏览型号FDD86381-F085的Datasheet PDF文件第5页浏览型号FDD86381-F085的Datasheet PDF文件第6页浏览型号FDD86381-F085的Datasheet PDF文件第7页 
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