Datasheet > FDD8770

FDD8770

更新时间： 2024-01-27 03:50:15

品牌	Logo	应用领域
安森美 - ONSEMI		开关脉冲晶体管
页数	文件大小	规格书
8页	560K
描述
N 沟道，PowerTrench® MOSFET，25V，35A，4.0mΩ

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FDD8770 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Transferred	零件包装代码：	DPAK
包装说明：	ROHS COMPLIANT, DPAK-3	针数：	3
Reach Compliance Code：	not_compliant	ECCN代码：	EAR99
HTS代码：	8541.29.00.95	风险等级：	4.46
雪崩能效等级（Eas）：	113 mJ	外壳连接：	DRAIN
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	25 V
最大漏极电流 (Abs) (ID)：	35 A	最大漏极电流 (ID)：	35 A
最大漏源导通电阻：	0.0055 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：	TO-252AA	JESD-30 代码：	R-PSSO-G2
JESD-609代码：	e3	湿度敏感等级：	1
元件数量：	1	端子数量：	2
工作模式：	ENHANCEMENT MODE	最高工作温度：	175 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	260
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	115 W
最大脉冲漏极电流 (IDM)：	407 A	认证状态：	Not Qualified
子类别：	FET General Purpose Power	表面贴装：	YES
端子面层：	Matte Tin (Sn)	端子形式：	GULL WING
端子位置：	SINGLE	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

FDD8770 数据手册

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与FDD8770相关器件

型号	品牌	描述	获取价格	数据表
FDD8778	FAIRCHILD	N-Channel PowerTrench MOSFET 25V, 35A, 14mohm	获取价格
FDD8778	ONSEMI	N 沟道 PowerTrench® MOSFET 25V，35A，14mΩ	获取价格
FDD8780	FAIRCHILD	N-Channel PowerTrench? MOSFET 25V, 35A, 8.5mOhm	获取价格
FDD8780	ONSEMI	N 沟道，PowerTrench® MOSFET，25V，35A，8.5mΩ	获取价格
FDD8780-G	FAIRCHILD	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET	获取价格
FDD8782	FAIRCHILD	N-Channel PowerTrench MOSFET	获取价格

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