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FDD8770 PDF预览

FDD8770

更新时间: 2024-10-29 11:14:31
品牌 Logo 应用领域
安森美 - ONSEMI 开关脉冲晶体管
页数 文件大小 规格书
8页 560K
描述
N 沟道,PowerTrench® MOSFET,25V,35A,4.0mΩ

FDD8770 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:SMALL OUTLINE, R-PSSO-G2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
Factory Lead Time:1 week风险等级:0.99
雪崩能效等级(Eas):113 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:25 V
最大漏极电流 (Abs) (ID):35 A最大漏极电流 (ID):35 A
最大漏源导通电阻:0.0055 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252AAJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):115 W
最大脉冲漏极电流 (IDM):407 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FDD8770 数据手册

 浏览型号FDD8770的Datasheet PDF文件第2页浏览型号FDD8770的Datasheet PDF文件第3页浏览型号FDD8770的Datasheet PDF文件第4页浏览型号FDD8770的Datasheet PDF文件第6页浏览型号FDD8770的Datasheet PDF文件第7页浏览型号FDD8770的Datasheet PDF文件第8页 
Typical Characteristics TJ = 25°C unless otherwise noted  
10  
8
6000  
Ciss  
VDD = 10V  
Coss  
6
VDD = 13V  
1000  
4
VDD = 16V  
Crss  
2
f = 1MHz  
VGS = 0V  
0
100  
0.1  
1
10  
30  
0
10  
20  
30  
40  
50  
60  
VDS, DRAIN TO SOURCE VOLTAGE (V)  
Qg, GATE CHARGE(nC)  
Figure 7. Gate Charge Characteristics  
Figure 8. Capacitance vs Drain to Source Voltage  
250  
200  
50  
TJ = 25oC  
VGS = 10V  
150  
10  
TJ = 125oC  
TJ = 150oC  
VGS = 4.5V  
θJC = 1.3oC/W  
100  
R
50  
1
0.01  
0
25  
0.1  
1
10  
100 300  
50  
75  
100  
125  
150  
175  
tAV, TIME IN AVALANCHE(ms)  
TC, CASE TEMPERATURE(oC)  
Figure 9. Unclamped Inductive Switching  
Capability  
Figure 10. Maximum Continuous Drain Current vs  
Case Temperature  
20000  
600  
o
T
= 25 C  
VGS = 10V  
10us  
C
10000  
1000  
100  
FOR TEMPERATURES  
o
100  
ABOVE 25 C DERATE PEAK  
100us  
CURRENT AS FOLLOWS:  
175 T  
C
I = I  
----------------------  
25  
150  
10  
1ms  
LIMITED BY  
PACKAGE  
1
10ms  
SINGLE PULSE  
OPERATION IN THIS  
AREA MAY BE  
LIMITED BY r  
DS(on)  
DC  
T
J
= MAX RATED  
SINGLE PULSE  
o
T
C
= 25 C  
0.1  
10-5  
10-4  
10-3  
t, PULSE WIDTH (s)  
10-2  
10-1  
100  
101  
1
10  
50  
VDS, DRAIN TO SOURCE VOLTAGE (V)  
Figure 11. Forward Bias Safe Operating Area  
Figure 12. Single Pulse Maximum Power  
Dissipation  
4
www.fairchildsemi.com  
FDD8770/FDU8770 Rev. 1.2  

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