Datasheet > FDD8870_08

FDD8870_08

更新时间： 2024-11-25 04:18:35

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
11页	487K
描述
N-Channel PowerTrench㈢ MOSFET

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中文翻译

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数据手册

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FDD8870_08 数据手册

April 2008

FDD8870 / FDU8870

N-Channel PowerTrench MOSFET

30V, 160A, 3.9mΩ

General Description

Features

This N-Channel MOSFET has been designed specifically to

improve the overall efficiency of DC/DC converters using

either synchronous or conventional switching PWM

controllers. It has been optimized for low gate charge, low

•

= 3.9mΩ, V = 10V, I = 35A

GS D

DS(ON)

= 4.4mΩ, V = 4.5V, I = 35A

DS(ON)

High performance trench technology for extremely low

and fast switching speed.

DS(ON)

•

Low gate charge

Applications

High power and current handling capability

•

DC/DC converters

I-PAK

(TO-251AA)

D-PAK

TO-252

(TO-252)

G D S

MOSFET Maximum Ratings T = 25°C unless otherwise noted

Symbol

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

DSS

±20

Drain Current

160

150

Continuous (T = 25 C, V = 10V) (Note 1)

Continuous (T = 25 C, V = 4.5V) (Note 1)

C GS

Continuous (T

= 25 C, V = 10V, with R = 52 C/W)

θJA

amb

Pulsed

Figure 4

690

Single Pulse Avalanche Energy (Note 2)

Power dissipation

160

Derate above 25 C

1.07

W/ C

T , T

Operating and Storage Temperature

-55 to 175

STG

Thermal Characteristics

Thermal Resistance Junction to Case TO-252, TO-251

Thermal Resistance Junction to Ambient TO-252, TO-251

0.94

100

C/W

θJC

θJA

C/W

Thermal Resistance Junction to Ambient TO-252, 1in copper pad area

C/W

FDD8870 / FDU8870 Rev. C2

12 3 4 5 6 7...11

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与FDD8870_08相关器件

型号	品牌	获取价格	描述	数据表
FDD8870_F085_13	FAIRCHILD	获取价格	N-Channel PowerTrenchÂ® MOSFET 30V, 160A, 3.9
FDD8870_NL	FAIRCHILD	获取价格	Power Field-Effect Transistor, 21A I(D), 30V, 0.0044ohm, 1-Element, N-Channel, Silicon, Me
FDD8870-F085	ONSEMI	获取价格	30 V、160 A、3.2 mΩ、Dual DPAKN 沟道 PowerTrench®
FDD8874	FAIRCHILD	获取价格	N-Channel PowerTrench MOSFET 30V, 116A
FDD8874	ONSEMI	获取价格	N 沟道，PowerTrench® MOSFET，30V，116A，5.1mΩ
FDD8874	UMW	获取价格	种类:N-Channel;漏源电压（Vdss）:30V;持续漏极电流（Id）（在25°C时
FDD8874_08	FAIRCHILD	获取价格	N-Channel PowerTrench MOSFET 30V, 116A, 5.1m ohm
FDD8874_NL	FAIRCHILD	获取价格	Power Field-Effect Transistor, 35A I(D), 30V, 0.0064ohm, 1-Element, N-Channel, Silicon, Me
FDD8876	FAIRCHILD	获取价格	N-Channel PowerTrench MOSFET
FDD8876	ONSEMI	获取价格	N 沟道，PowerTrench® MOSFET，30V，73A，8.2mΩ