Datasheet > FDD8882

FDD8882

更新时间： 2024-01-14 13:31:53

品牌	Logo	应用领域
安森美 - ONSEMI		开关晶体管
页数	文件大小	规格书
14页	494K
描述
N 沟道，PowerTrench® MOSFET，30V，55A，11.5mΩ

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FDD8882 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
零件包装代码：	TO-252AA	包装说明：	LEAD FREE, DPAK-3
针数：	3	Reach Compliance Code：	not_compliant
ECCN代码：	EAR99	风险等级：	5.21
Is Samacsys：	N	雪崩能效等级（Eas）：	41 mJ
外壳连接：	DRAIN	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	30 V	最大漏极电流 (Abs) (ID)：	12.6 A
最大漏极电流 (ID)：	35 A	最大漏源导通电阻：	0.015 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JEDEC-95代码：	TO-252AA
JESD-30 代码：	R-PSSO-G2	JESD-609代码：	e3
元件数量：	1	端子数量：	2
工作模式：	ENHANCEMENT MODE	最高工作温度：	175 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	55 W
认证状态：	Not Qualified	子类别：	FET General Purpose Power
表面贴装：	YES	端子面层：	Matte Tin (Sn)
端子形式：	GULL WING	端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

FDD8882 数据手册

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与FDD8882相关器件

型号	品牌	描述	获取价格	数据表
FDD8882_08	FAIRCHILD	N-Channel PowerTrench㈢ MOSFET	获取价格
FDD8882_NL	FAIRCHILD	N-Channel PowerTrench MOSFET	获取价格
FDD8896	FAIRCHILD	N-Channel PowerTrench MOSFET	获取价格
FDD8896	ONSEMI	N 沟道，PowerTrench® MOSFET， 30V，94A，4.7mΩ	获取价格
FDD8896	UMW	种类:N-Channel;漏源电压（Vdss）:30V;持续漏极电流（Id）（在25°C时	获取价格
FDD8896_08	FAIRCHILD	N-Channel PowerTrench㈢ MOSFET	获取价格

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