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FDD8896_NL

更新时间: 2024-02-23 08:28:44
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关晶体管
页数 文件大小 规格书
11页 203K
描述
Power Field-Effect Transistor, 17A I(D), 30V, 0.068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3

FDD8896_NL 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-252AA包装说明:LEAD FREE, DPAK-3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.2
雪崩能效等级(Eas):168 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):17 A最大漏极电流 (ID):17 A
最大漏源导通电阻:0.068 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252AAJESD-30 代码:R-PSSO-G2
JESD-609代码:e3元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):80 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FDD8896_NL 数据手册

 浏览型号FDD8896_NL的Datasheet PDF文件第2页浏览型号FDD8896_NL的Datasheet PDF文件第3页浏览型号FDD8896_NL的Datasheet PDF文件第4页浏览型号FDD8896_NL的Datasheet PDF文件第5页浏览型号FDD8896_NL的Datasheet PDF文件第6页浏览型号FDD8896_NL的Datasheet PDF文件第7页 
November 2004  
FDD8896 / FDU8896  
®
N-Channel PowerTrench MOSFET  
30V, 94A, 5.7mΩ  
General Description  
Features  
This N-Channel MOSFET has been designed specifically to  
improve the overall efficiency of DC/DC converters using  
either synchronous or conventional switching PWM  
controllers. It has been optimized for low gate charge, low  
r
= 5.7m, V = 10V, I = 35A  
GS D  
DS(ON)  
r
= 6.8m, V = 4.5V, I = 35A  
DS(ON)  
GS  
D
High performance trench technology for extremely low  
r
r
and fast switching speed.  
DS(ON)  
DS(ON)  
Low gate charge  
Applications  
High power and current handling capability  
DC/DC converters  
D
D
G
S
G
I-PAK  
(TO-251AA)  
D-PAK  
(TO-252)  
S
G D S  
MOSFET Maximum Ratings T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
Ratings  
30  
Units  
V
V
Drain to Source Voltage  
Gate to Source Voltage  
V
V
DSS  
GS  
±20  
Drain Current  
o
94  
85  
A
A
Continuous (T = 25 C, V = 10V) (Note 1)  
C
GS  
o
I
Continuous (T = 25 C, V = 4.5V) (Note 1)  
C GS  
D
o
o
Continuous (T  
= 25 C, V = 10V, with R = 52 C/W)  
θJA  
17  
A
amb  
GS  
Pulsed  
Figure 4  
168  
A
E
P
Single Pulse Avalanche Energy (Note 2)  
mJ  
AS  
Power dissipation  
80  
W
D
o
o
Derate above 25 C  
0.53  
W/ C  
o
T , T  
Operating and Storage Temperature  
-55 to 175  
C
J
STG  
Thermal Characteristics  
o
R
R
R
Thermal Resistance Junction to Case TO-252, TO-251  
Thermal Resistance Junction to Ambient TO-252, TO-251  
1.88  
100  
52  
C/W  
θJC  
θJA  
θJA  
o
C/W  
2
o
Thermal Resistance Junction to Ambient TO-252, 1in copper pad area  
C/W  
©2004 Fairchild Semiconductor Corporation  
FDD8896 / FDU8896 Rev. C1  

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