是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | TO-252AA | 包装说明: | LEAD FREE, DPAK-3 |
针数: | 3 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | 风险等级: | 5.2 |
雪崩能效等级(Eas): | 168 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (Abs) (ID): | 17 A | 最大漏极电流 (ID): | 17 A |
最大漏源导通电阻: | 0.068 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-252AA | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 175 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 80 W | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | Matte Tin (Sn) | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
FDD8896_08 | FAIRCHILD | N-Channel PowerTrench㈢ MOSFET |
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FDD8896_12 | FAIRCHILD | N-Channel PowerTrench® MOSFET 30V, 94A, 5.7m |
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FDD8896_NF054 | FAIRCHILD | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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FDD8896_NL | FAIRCHILD | Power Field-Effect Transistor, 17A I(D), 30V, 0.068ohm, 1-Element, N-Channel, Silicon, Met |
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FDD8896_SBSW004 | FAIRCHILD | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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FDD8896-F085 | ONSEMI | 30 V、94 A、4.7 mΩ、l DPAKN 沟道 PowerTrench® |
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