Datasheet > FDD8896_12

FDD8896_12

更新时间： 2024-11-18 12:23:27

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
11页	1040K
描述
N-Channel PowerTrenchÂ® MOSFET 30V, 94A, 5.7mÎ©

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FDD8896_12 数据手册

January 2012

FDD8896_F085

N-Channel PowerTrench MOSFET

30V, 94A, 5.7mΩ

General Description

Features

This N-Channel MOSFET has been designed specifically to

improve the overall efficiency of DC/DC converters using

either synchronous or conventional switching PWM

controllers. It has been optimized for low gate charge, low

•

= 5.7mΩ, V = 10V, I = 35A

DS(ON)

GS D

= 6.8mΩ, V = 4.5V, I = 35A

DS(ON)

High performance trench technology for extremely low

and fast switching speed.

DS(ON)

•

Low gate charge

•

High power and current handling capability

Qualified to AEC Q101

Applications

•

DC/DC converters

RoHS Compliant

D-PAK

TO-252

(TO-252)

MOSFET Maximum Ratings ^T= 25°C unless otherwise noted

Symbol

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

DSS

Drain Current

Continuous (T = 25 C, V = 10V) (Note 1)

Continuous (T = 25 C, V = 4.5V) (Note 1)

C GS

Continuous (T

= 25 C, V = 10V, with R = 52 C/W)

θJA

amb

Pulsed

Figure 4

168

0.53

Single Pulse Avalanche Energy (Note 2)

Power dissipation

Derate above 25 C

W/ C

T , T

Operating and Storage Temperature

-55 to 175

STG

Thermal Characteristics

Thermal Resistance Junction to Case TO-252

Thermal Resistance Junction to Ambient TO-252

Thermal Resistance Junction to Ambient TO-252, 1in copper pad area

1.88

100

C/W

θJC

θJA

C/W

FDD8896_F085 Rev. C2

www.fairchildsemi.com

12 3 4 5 6 7...11

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