是否无铅: | 不含铅 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
Factory Lead Time: | 26 weeks | 风险等级: | 0.94 |
Samacsys Confidence: | 4 | Samacsys Status: | Released |
2D Presentation: | https://componentsearchengine.com/2D/0T/167027.5.5.png | Schematic Symbol: | https://componentsearchengine.com/symbol.php?partID=167027 |
PCB Footprint: | https://componentsearchengine.com/footprint.php?partID=167027 | 3D View: | https://componentsearchengine.com/viewer/3D.php?partID=167027 |
Samacsys PartID: | 167027 | Samacsys Image: | https://componentsearchengine.com/Images/9/FDD8647L.jpg |
Samacsys Thumbnail Image: | https://componentsearchengine.com/Thumbnails/5/FDD8647L.jpg | Samacsys Pin Count: | 3 |
Samacsys Part Category: | MOSFET (N-Channel) | Samacsys Package Category: | Other |
Samacsys Footprint Name: | FDD8647L-1 | Samacsys Released Date: | 2015-07-12 18:27:54 |
Is Samacsys: | N | 雪崩能效等级(Eas): | 33 mJ |
外壳连接: | DRAIN | 配置: | SINGLE |
最小漏源击穿电压: | 40 V | 最大漏极电流 (Abs) (ID): | 52 A |
最大漏极电流 (ID): | 14 A | 最大漏源导通电阻: | 0.009 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-252 |
JESD-30 代码: | R-PSSO-G2 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 43 W | 最大脉冲漏极电流 (IDM): | 100 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | Tin (Sn) |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
FDD86540 | FAIRCHILD | N-Channel PowerTrench® MOSFET 60 V, 50 A, 4. |
获取价格 |
|
FDD86540 | ONSEMI | N 沟道 PowerTrench® MOSFET 60V,136 A,4.1 mΩ |
获取价格 |
|
FDD86567-F085 | ONSEMI | 60 V、100 A、2.6 mΩ、DPAKN 沟道 PowerTrench® |
获取价格 |
|
FDD86569 | ONSEMI | Power Field-Effect Transistor |
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|
FDD86569-F085 | ONSEMI | N 沟道 PowerTrench® MOSFET 60 V,90 A,5.7 mΩ |
获取价格 |
|
FDD86580-F085 | ONSEMI | 60 V N 沟道 PowerTrench® MOSFET |
获取价格 |