Datasheet > FDD86367-F085

FDD86367-F085

更新时间： 2024-10-03 11:14:27

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	349K
描述
N 沟道 PowerTrench® MOSFET 80V，100A，4.2 mΩ，

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

FDD86367-F085 技术参数

是否无铅：	不含铅	生命周期：	Active
Reach Compliance Code：	not_compliant	风险等级：	1.51
Is Samacsys：	N	JESD-609代码：	e3
湿度敏感等级：	1	峰值回流温度（摄氏度）：	260
端子面层：	Tin (Sn)	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

FDD86367-F085 数据手册

DATA SHEET

www.onsemi.com

MOSFET – N-Channel,

POWERTRENCH⁾

80 V, 100 A, 4.2 mW

FDD86367-F085

Features

N−Channel

• Typical R

• Typical Q

= 3.3 mW at V = 10 V, I = 80 A

GS D

DS(on)

= 68 nC at V = 10 V, I = 80 A

g(tot)

• UIS Capability

• AEC−Q101 Qualified and PPAP Capable

• This Device is Pb−Free, Halogen Free/BFR Free and is RoHS

Compliant

DPAK3 (TO−252 3 LD)

Applications

CASE 369AS

• Automotive Engine Control

• PowerTrain Management

• Solenoid and Motor Drivers

• Integrated Starter/Alternator

• Primary Switch for 12 V Systems

MARKING DIAGRAM

$Y&Z&3&K

FDD

86367

MOSFET MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Symbol

VDSS

Parameter

Drain−to−Source Voltage

Gate−to−Source Voltage

Ratings

Unit

FDD86367 = Specific Device Code

= onsemi Logo

= Assembly Plant Code

= 3−Digit Date Code

VGS

= 2−Digits Lot Run Traceability Code

Drain Current − Continuous (V = 10)

(Note 1)

100

= 25°C

Pulsed Drain Current

= 25°C See Figure 4

ORDERING INFORMATION

See detailed ordering and shipping information on page 2 of

this data sheet.

Single Pulse Avalanche Energy (Note 2)

Power Dissipation

227

Derate Above 25°C

1.52

W/°C

°C

T , T

Operating and Storage Temperature

Thermal Resistance, Junction to Case

−55 to +175

0.66

STG

°C/W

Maximum Thermal Resistance,

Junction to Ambient (Note 3)

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Current is limited by bondwire configuration.

2. Starting T = 25°C, L = 40 mH, I = 64 A, V = 80 V during inductor charging

and V = 0 V during time in avalanche.

3. R

is the sum of the junction−to−case and case−to−ambient thermal

resistance, where the case thermal reference is defined as the solder

mounting surface of the drain pins. R

is guaranteed by design, while R

is determined by the board design. The maximum rating presented here is

based on mounting on a 1 in pad of 2oz copper.

Publication Order Number:

October, 2021 − Rev. 3

FDD86367−F085/D

12 3 4 5 6 7

中文翻译

下载PDF

与FDD86367-F085相关器件

型号	品牌	获取价格	描述	数据表
FDD86369	ONSEMI	获取价格	N 沟道，PowerTrench® MOSFET，80V，90A，7.9mΩ
FDD86369-F085	ONSEMI	获取价格	N 沟道，PowerTrench® MOSFET，80 V，90 A，7.9 mΩ
FDD86380-F085	ONSEMI	获取价格	N 沟道，PowerTrench® MOSFET，80 V，50 A，13.5 mΩ
FDD86381-F085	ONSEMI	获取价格	N 沟道，PowerTrench® MOSFET，80 V，25 A，21 mΩ
FDD8647L	FAIRCHILD	获取价格	N-Channel PowerTrench® MOSFET 40 V, 42 A, 9 m
FDD8647L	ONSEMI	获取价格	N 沟道，PowerTrench® MOSFET，40V，42A，9mΩ
FDD86540	FAIRCHILD	获取价格	N-Channel PowerTrenchÂ® MOSFET 60 V, 50 A, 4.
FDD86540	ONSEMI	获取价格	N 沟道 PowerTrench® MOSFET 60V，136 A，4.1 mΩ
FDD86567-F085	ONSEMI	获取价格	60 V、100 A、2.6 mΩ、DPAKN 沟道 PowerTrench®
FDD86569	ONSEMI	获取价格	Power Field-Effect Transistor

与FDD86367-F085相关文章

塔塔电子与力积电达成技术转让协议，携手建设印度首座晶圆厂
2024-09-29

38
英特尔震撼发布：128核心256线程的至强6性能核处理器
2024-09-29

32
SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

29
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

40

产品中心

服务支持

精选活动

关于我们

帮助中心

FDD86367-F085

FDD86367-F085 技术参数

FDD86367-F085 数据手册

与FDD86367-F085相关器件

与FDD86367-F085相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

FDD86367-F085

FDD86367-F085 技术参数

FDD86367-F085 数据手册

与FDD86367-F085相关器件

与FDD86367-F085相关文章

您还可以找

您在本页遇到什么问题？