5秒后页面跳转
FDD050N03B PDF预览

FDD050N03B

更新时间: 2024-11-25 12:46:19
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管开关脉冲
页数 文件大小 规格书
8页 503K
描述
N-Channel PowerTrench MOSFET

FDD050N03B 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:DPAK
包装说明:ROHS COMPLIANT, DPAK-3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.8
雪崩能效等级(Eas):72 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):90 A最大漏极电流 (ID):50 A
最大漏源导通电阻:0.005 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):65 W最大脉冲漏极电流 (IDM):360 A
认证状态:Not Qualified子类别:FET General Purpose Powers
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON

FDD050N03B 数据手册

 浏览型号FDD050N03B的Datasheet PDF文件第2页浏览型号FDD050N03B的Datasheet PDF文件第3页浏览型号FDD050N03B的Datasheet PDF文件第4页浏览型号FDD050N03B的Datasheet PDF文件第5页浏览型号FDD050N03B的Datasheet PDF文件第6页浏览型号FDD050N03B的Datasheet PDF文件第7页 
March 2013  
FDD050N03B  
N-Channel PowerTrench MOSFET  
30 V, 90 A, 5.0 mΩ  
®
Features  
Description  
RDS(on) = 3.7 mΩ ( Typ.)@ VGS = 10 V, ID = 25 A  
This N-Channel MOSFET is produced using Fairchild  
Semiconductor®’s advance PowerTrench® process that has  
been tailored to minimize the on-state resistance while maintain-  
ing superior switching performance.  
Fast Switching Speed  
Low Gate Charge, QG = 33 nC( Typ.)  
High Performance Trench Technology for Extremely Low  
RDS(on)  
Applications  
Synchronous Rectification for ATX / Server / Telecom PSU  
High Power and Current Handling Capability  
RoHS Compliant  
D
D
G
G
D-PAK  
S
(TO-252)  
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted  
Symbol  
VDSS  
VGSS  
Parameter  
FDD050N03B  
Unit  
V
Drain to Source Voltage  
Gate to Source Voltage  
30  
±16  
V
- Continuous (TC = 25oC, Silicon Limited)  
- Continuous (TC = 100oC, Silicon Limited)  
- Continuous (TC = 25oC, Package Limited)  
90*  
ID  
Drain Current  
63*  
A
50  
IDM  
Drain Current  
- Pulsed  
(Note 1)  
(Note 2)  
(Note 3)  
360  
A
mJ  
EAS  
dv/dt  
Single Pulsed Avalanche Energy  
Peak Diode Recovery dv/dt  
72  
2
V/ns  
W
W/oC  
oC  
(TC = 25oC)  
- Derate above 25oC  
65  
PD  
Power Dissipation  
0.43  
-55 to +175  
TJ, TSTG  
TL  
Operating and Storage Temperature Range  
Maximum Lead Temperature for Soldering Purpose,  
1/8” from Case for 5 Seconds  
300  
oC  
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 50A.  
Thermal Characteristics  
Symbol  
RθJC  
RθJA  
Parameter  
Thermal Resistance, Junction to Case, Max.  
Thermal Resistance, Junction to Ambient, Max.  
FDD050N03B  
Unit  
2.3  
40  
oC/W  
(Note 5)  
©2009 Fairchild Semiconductor Corporation  
FDD050N03B Rev. C0  
1
www.fairchildsemi.com  

FDD050N03B 替代型号

型号 品牌 替代类型 描述 数据表
FQD12P10TM_F085 FAIRCHILD

类似代替

Power Field-Effect Transistor, 9.4A I(D), 100V, 0.29ohm, 1-Element, P-Channel, Silicon, Me
FDD86102 FAIRCHILD

类似代替

N-Channel PowerTrench® MOSFET 100 V, 36 A, 2
FDD86102 ONSEMI

功能相似

N 沟道,屏蔽门极,PowerTrench® MOSFET,100 V,36 A,24 m

与FDD050N03B相关器件

型号 品牌 获取价格 描述 数据表
FDD05-12D CHINFA

获取价格

Power Supply Module
FDD05-12D0 CHINFA

获取价格

DC - DC CONVERTER 5 ~ 6W 5V INPUT MODEL
FDD05-12D1 CHINFA

获取价格

Power Supply Module
FDD05-12D2 CHINFA

获取价格

Power Supply Module
FDD05-12D3 CHINFA

获取价格

Power Supply Module
FDD05-12D4 CHINFA

获取价格

DC - AC CONCERTER 5~6W SINGLE & DUAL OUTPUT
FDD05-12D5 CHINFA

获取价格

Power Supply Module
FDD05-12S CHINFA

获取价格

Power Supply Module
FDD05-12S0 CHINFA

获取价格

DC - DC CONVERTER 5 ~ 6W 5V INPUT MODEL
FDD05-12S1 CHINFA

获取价格

Power Supply Module