Datasheet > FDD86102LZ

FDD86102LZ

更新时间： 2024-11-21 12:52:15

品牌	Logo	应用领域
美台 - DIODES		晶体晶体管开关脉冲
页数	文件大小	规格书
6页	372K
描述
N-Channel PowerTrenchÂ® MOSFET 100 V, 35 A, 22.5 mÎ©

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FDD86102LZ 数据手册

August 2012

FDD86102LZ

N-Channel PowerTrench^®MOSFET

100 V, 35 A, 22.5 mΩ

Features

General Description

This N-Channel MOSFET is produced using Fairchild

Semiconductor’s advanced PowerTrench^®process that has

been especially tailored to minimize the on-state resistance and

switching loss. G-S zener has been added to enhance ESD

voltage level.

Max r_DS(on)= 22.5 mΩ at V_GS= 10 V, I_D= 8 A

Max r_DS(on)= 31 mΩ at V_GS= 4.5 V, I_D= 7 A

HBM ESD protection level > 6 kV typical (Note 4)

Very low Qg and Qgd compared to competing trench

technologies

Applications

Fast switching speed

100% UIL tested

RoHS Compliant

DC - DC Conversion

Inverter

Synchronous Rectifier

D-PAK

TO-252

(TO-252)

MOSFET Maximum Ratings T_C= 25 °C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

100

±20

Drain Current -Continuous (Package limited)

-Continuous (Silicon limited)

-Continuous

T_C= 25 °C

_C= 25 °C

I_D

T_A= 25 °C

(Note 1a)

(Note 3)

-Pulsed

E_AS

Single Pulse Avalanche Energy

Power Dissipation

T_C= 25 °C

T_A= 25 °C

P_D

Power Dissipation

(Note 1a)

3.1

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

R_θJC

R_θJA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

2.3

°C/W

(Note 1a)

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

13 ’’

Tape Width

12 mm

Quantity

FDD86102LZ

D-PAK(TO-252)

2500 units

FDD86102LZ Rev.C1

www.fairchildsemi.com

12 3 4 5 6

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