Datasheet > FDD86113LZ

FDD86113LZ

更新时间： 2024-10-03 17:15:31

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
6页	451K
描述
种类:N-Channel;漏源电压（Vdss）:100V;持续漏极电流（Id）（在25°C时）:4.2A;Vgs(th)(V):±20;漏源导通电阻:100mΩ@10V

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

FDD86113LZ 数据手册

FDD86113

N-Channel MOSFET

UMW

100V

General Description

This N-Channel logic Level MOSFETs are produced using

advanced process that incorporates Shielded Gate

technology. This process has been optimized for the onsta-

te resistance and yet maintain superior switching

performance.

Features

Shielded Gate MOSFET Technology

•

100V

•

I (at V =10V)4.2A

•

DS(ON)

(at V =10V) < 104mΩ

(at V = 4.5V) < 156mΩ

•

HBM ESD protection level > 6 kV typical (Note 4)

High performance trench technology for extremely low R

DS(on)

•

High power and current handling capability in a widely used

surface mount package

Application

•

DC-DC conversion

MOSFET Maximum Ratings

T = 25 °C unless otherwise noted

Symbol

Parameter

Ratings

100

±20

5.5

Units

V_DS

V_GS

Drain to Source Voltage

Gate to Source Voltage

Drain Current

-Continuous

T_C= 25 °C

TA = 25 °C

I_D

-Continuous

(Note 1a)

(Note 3)

4.2

-Pulsed

Single Pulse Avalanche Energy

Power Dissipation

E_AS

T_C= 25 °C

T_A= 25 °C

P_D

Power Dissipation

(Note 1a)

3.1

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

R_θJC

R_θJA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

(Note 1)

4.3

°C/W

(Note 1a)

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6

中文翻译

下载PDF

与FDD86113LZ相关器件

型号	品牌	获取价格	描述	数据表
FDD86250	FAIRCHILD	获取价格	FDD86250 N-Channel Shielded Gate PowerTrenchÂ
FDD86250	ONSEMI	获取价格	N 沟道，屏蔽门极，PowerTrench® MOSFET，150 V，51 A，22 m
FDD86250-F085	ONSEMI	获取价格	N 沟道，屏蔽门极，PowerTrench® MOSFET，15 V，50 A，22 mΩ
FDD86252	ONSEMI	获取价格	N 沟道屏蔽门极 PowerTrench® MOSFET 150 V，27 A，52 mΩ
FDD86252	FAIRCHILD	获取价格	N-Channel PowerTrenchÂ® MOSFET 150 V, 27 A, 5
FDD86326	ONSEMI	获取价格	N 沟道，屏蔽门极，PowerTrench® MOSFET，80 V，37 A，23 mΩ
FDD86326	FAIRCHILD	获取价格	N-Channel Shielded Gate PowerTrench MOSFET 80 V, 37 A, 23 m Ohm
FDD86367	ONSEMI	获取价格	N 沟道 PowerTrench® MOSFET 80 V，100 A，4.2 mΩ
FDD86367-F085	ONSEMI	获取价格	N 沟道 PowerTrench® MOSFET 80V，100A，4.2 mΩ，
FDD86369	ONSEMI	获取价格	N 沟道，PowerTrench® MOSFET，80V，90A，7.9mΩ