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FDD86250 PDF预览

FDD86250

更新时间： 2024-11-26 11:15:43
品牌 Logo 应用领域
安森美 - ONSEMI 开关脉冲晶体管
页数 文件大小 规格书
8页 585K
描述
N 沟道，屏蔽门极，PowerTrench® MOSFET，150 V，51 A，22 mΩ

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中文翻译

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FDD86250 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PSSO-G2Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：26 weeks风险等级：0.9
雪崩能效等级（Eas）：180 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：150 V
最大漏极电流 (Abs) (ID)：51 A最大漏极电流 (ID)：8 A
最大漏源导通电阻：0.022 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-252JESD-30 代码：R-PSSO-G2
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：2
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：132 W
最大脉冲漏极电流 (IDM)：40 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子面层：Tin (Sn)端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

FDD86250 数据手册

 浏览型号FDD86250的Datasheet PDF文件第2页浏览型号FDD86250的Datasheet PDF文件第3页浏览型号FDD86250的Datasheet PDF文件第4页浏览型号FDD86250的Datasheet PDF文件第5页浏览型号FDD86250的Datasheet PDF文件第6页浏览型号FDD86250的Datasheet PDF文件第7页 
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Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers  
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor  
product management systems do not have the ability to manage part nomenclature that utilizes an underscore  
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device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated  
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email any questions regarding the system integration to Fairchild_questions@onsemi.com.  
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number  
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中文翻译

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与FDD86250相关器件

型号 品牌 获取价格 描述 数据表
FDD86250-F085 ONSEMI

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 		N 沟道，屏蔽门极，PowerTrench® MOSFET，15 V，50 A，22 mΩ
FDD86252 ONSEMI

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 		N 沟道屏蔽门极 PowerTrench® MOSFET 150 V，27 A，52 mΩ
FDD86252 FAIRCHILD

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 		N-Channel PowerTrench® MOSFET 150 V, 27 A, 5
FDD86326 ONSEMI

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 		N 沟道，屏蔽门极，PowerTrench® MOSFET，80 V，37 A，23 mΩ
FDD86326 FAIRCHILD

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 		N-Channel Shielded Gate PowerTrench MOSFET 80 V, 37 A, 23 m Ohm
FDD86367 ONSEMI

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 		N 沟道 PowerTrench® MOSFET 80 V，100 A，4.2 mΩ
FDD86367-F085 ONSEMI

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 		N 沟道 PowerTrench® MOSFET 80V，100A，4.2 mΩ，
FDD86369 ONSEMI

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 		N 沟道，PowerTrench® MOSFET，80V，90A，7.9mΩ
FDD86369-F085 ONSEMI

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 		N 沟道，PowerTrench® MOSFET，80 V，90 A，7.9 mΩ
FDD86380-F085 ONSEMI

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 		N 沟道，PowerTrench® MOSFET，80 V，50 A，13.5 mΩ

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