Datasheet > FDD8586

FDD8586

更新时间： 2024-11-22 17:15:55

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
6页	643K
描述
种类:N-Channel;漏源电压（Vdss）:25V;持续漏极电流（Id）（在25°C时）:35A;Vgs(th)(V):±20;漏源导通电阻:5.5mΩ@10V;漏源导通电阻:8.5mΩ@4.5V

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FDD8586 数据手册

FDD8586

UMW

20V N-Channel MOSFET

General Description

This N-Channel MOSFET has been designed

specifically to improve the overall efficiency of DC/

DC converters using either synchronous or

conventional switching PWM controllers. It has

been optimized for low gate charge, low r_DS(on)

and fast switching speed.

Application

•

Vcore DC-DC for Desktop Computers and Servers

VRM for Intermediate Bus Architecture

Features

•

V_DS(V) = 20V

I_D= 35A (V_GS= 10V)

R_DS(ON)<5.5mΩ (V _GS= 10V)

R_DS(ON)< 8.5mΩ (V _GS= 4.5V)

•

Low gate charge: Q_g(TOT)= 34nC(Typ), V_GS= 10V

Low gate resistance

MOSFET Maximum Ratings T_C= 25°C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

±20

Drain Current -Continuous (Package Limited)

-Continuous (Die Limited)

-Pulsed

I_D

(Note 1)

(Note 2)

354

E_AS

Single Pulse Avalanche Energy

Power Dissipation

144

P_D

T_J, T_STG

Operating and Storage Temperature

-55 to 175

°C

Thermal Characteristics

R_θJC

R_θJA

Thermal Resistance, Junction to Case TO-252

1.94

100

°C/W

Thermal Resistance, Junction to Ambient TO-252

Thermal Resistance, Junction to Ambient TO-252,1in²copper pad area

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6

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