Datasheet > FDD8453LZ_F085

FDD8453LZ_F085

更新时间： 2024-11-09 20:08:39

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		开关晶体管
页数	文件大小	规格书
7页	370K
描述
Power Field-Effect Transistor, 50A I(D), 40V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3

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FDD8453LZ_F085 技术参数

Aug 2012

FDD8453LZ_F085

N-Channel Power Trench MOSFET

40V, 50A, 6.5mΩ

Features

Typ r_DS(on)= 5mΩ at V_GS= 10V, I_D= 15A

General Description

Typ r_DS(on)= 6mΩ at V_GS= 4.5V, I_D= 13A

This N-Channel MOSFET is produced using Fairchild

Semiconductor’s advanced PowerTrench® process that

has been especially tailored to minimize the on-state

resistance and switching loss. G-S zener has been added

HBM ESD protection level > 7kv typical

RoHS Compliant

Qualified to AEC Q101

to enhance ESD voltage level.

Applications

Inverter

Synchronous Rectifier

Symbol

Package

D-PAK

(TO-252)

FDD8453LZ_F085 Rev. C1

www.fairchildsemi.com

12 3 4 5 6 7

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型号	品牌	获取价格	描述	数据表
FDD8453LZ_F085_12	FAIRCHILD	获取价格	N-Channel Power TrenchÂ® MOSFET 40V, 50A, 6.5
FDD8453LZ-F085	ONSEMI	获取价格	40 V、50 A、5.0 mΩ、DPAKN 沟道 PowerTrench®
FDD850N10L	FAIRCHILD	获取价格	N-Channel PowerTrench MOSFET 100 V, 15.7 A, 75 m Ohm
FDD850N10L	ONSEMI	获取价格	N 沟道 PowerTrench® MOSFET 100V，15.7A，75mΩ
FDD850N10LD	FAIRCHILD	获取价格	Power Field-Effect Transistor, 15.3A I(D), 100V, 0.096ohm, 1-Element, N-Channel, Silicon,
FDD850N10LD	ONSEMI	获取价格	BoostPak（N 沟道，PowerTrench® MOSFET + 二极管），100
FDD8580	FAIRCHILD	获取价格	N-Channel PowerTrench MOSFET 20V, 35A, 9mohm
FDD8586	FAIRCHILD	获取价格	N-Channel PowerTrench MOSFET 20V, 35A, 5.5mOHM
FDD8586	ROCHESTER	获取价格	35A, 20V, 0.0055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT, DPAK-3
FDD8586	UMW	获取价格	种类:N-Channel;漏源电压（Vdss）:25V;持续漏极电流（Id）（在25°C时