FDD7N20LZ

更新时间： 2024-11-18 12:06:23

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
8页	329K
描述
N-Channel UniFET MOSFET

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中文翻译

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数据手册

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FDD7N20LZ 数据手册

March 2013

FDD7N25LZ

N-Channel UniFET MOSFET

250 V, 6.2 A, 550 m

Features

Description

UniFET^TMMOSFET is Fairchild Semiconductor^®’s high voltage

MOSFET family based on planar stripe and DMOS technology.

This MOSFET is tailored to reduce on-state resistance, and to

provide better switching performance and higher avalanche

energy strength. This device family is suitable for switching

power converter applications such as power factor correction

(PFC), flat panel display (FPD) TV power, ATX and electronic

lamp ballasts.

•

R_DS(on)= 430 m (Typ.) @ V_GS= 10 V, I_D= 3.1 A

Low Gate Charge (Typ.12 nC)

Low C_rss(Typ. 8 pF)

100% Avalanche Tested

Improved dv/dt Capability

ESD Improved Capability

RoHS Compliant

Applications

•

LCD/LED/PDP TV

Consumer Appliances

Lighting

Uninterruptible Power Supply

AC-DC Power Supply

D-PAK

MOSFET Maximum Ratings T_C= 25^oC unless otherwise noted*

Symbol

V_DSS

V_GSS

Parameter

FDD7N20LZ

Unit

Drain to Source Voltage

Gate to Source Voltage

250

±20

- Continuous (T_C= 25^oC)

- Continuous (T_C= 100^oC)

- Pulsed

6.2

I_D

Drain Current

3.7

I_DM

Drain Current

(Note 1)

(Note 2)

(Note 1)

(Note 3)

E_AS

I_AR

Single Pulsed Avalanche Energy

Avalanche Current

115

5.5

E_AR

dv/dt

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

5.6

V/ns

W/^oC

^oC

(T_C= 25^oC)

- Derate above 25^oC

P_D

Power Dissipation

0.45

-55 to +150

T_J, T_STG

T_L

Operating and Storage Temperature Range

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300

^oC

Thermal Characteristics

Symbol

Parameter

Unit

FDD7N20LZ

R_JC

R_JA

Thermal Resistance, Junction to Case, Max.

Thermal Resistance, Junction to Ambient, Max.

2.2

^oC/W

110

FDD7N25LZ Rev. C0

www.fairchildsemi.com

12 3 4 5 6 7 8

中文翻译

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