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FDD7N60NZ PDF预览

FDD7N60NZ

更新时间: 2024-11-06 21:10:19
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关脉冲晶体管
页数 文件大小 规格书
9页 350K
描述
Power Field-Effect Transistor

FDD7N60NZ 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:,Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.73湿度敏感等级:1
峰值回流温度(摄氏度):260处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

FDD7N60NZ 数据手册

 浏览型号FDD7N60NZ的Datasheet PDF文件第2页浏览型号FDD7N60NZ的Datasheet PDF文件第3页浏览型号FDD7N60NZ的Datasheet PDF文件第4页浏览型号FDD7N60NZ的Datasheet PDF文件第5页浏览型号FDD7N60NZ的Datasheet PDF文件第6页浏览型号FDD7N60NZ的Datasheet PDF文件第7页 
March 2013  
FDD7N60NZ / FDU7N60NZ  
TM  
N-Channel UniFET II MOSFET  
600 V, 5.5 A, 1.25  
Features  
Description  
RDS(on) = 1.05 (Typ.) @ VGS = 10 V, ID = 2.75 A  
Low Gate Charge (Typ. 13 nC)  
Low Crss (Typ. 7 pF)  
UniFETTM II MOSFET is Fairchild Semiconductor®’s high voltage  
MOSFET family based on advanced planar stripe and DMOS tech-  
nology. This advanced MOSFET family has the smallest on-state  
resistance among the planar MOSFET, and also provides superior  
switching performance and higher avalanche energy strength. In  
addition, internal gate-source ESD diode allows UniFETTM II MOS-  
FET to withstand over 2kV HBM surge stress. This device family is  
suitable for switching power converter applications such as power  
factor correction (PFC), flat panel display (FPD) TV power, ATX  
and electronic lamp ballasts.  
100% Avalanche Tested  
Improved dv/dt Capability  
ESD Improved Capability  
RoHS Compliant  
Applications  
Lighting  
Uninterruptible Power Supply  
D
D
G
G
G
D
I-PAK  
D-PAK  
S
S
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*  
Symbol  
VDSS  
VGSS  
Parameter  
FDD7N60NZ/FDU7N60NZ  
Unit  
V
Drain to Source Voltage  
Gate to Source Voltage  
600  
±25  
V
- Continuous (TC = 25oC)  
- Continuous (TC = 100oC)  
- Pulsed  
5.5  
ID  
Drain Current  
A
3.3  
IDM  
Drain Current  
(Note 1)  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
22  
A
mJ  
A
EAS  
IAR  
Single Pulsed Avalanche Energy  
Avalanche Current  
347  
5.5  
EAR  
dv/dt  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
12.5  
10  
mJ  
V/ns  
W
W/oC  
oC  
(TC = 25oC)  
- Derate above 25oC  
90  
PD  
Power Dissipation  
0.7  
TJ, TSTG  
TL  
Operating and Storage Temperature Range  
-55 to +150  
Maximum Lead Temperature for Soldering Purpose,  
1/8” from Case for 5 Seconds  
300  
oC  
Thermal Characteristics  
Symbol  
Parameter  
Unit  
FDD7N60NZ/FDU7N60NZ  
RJC  
RJA  
Thermal Resistance, Junction to Case, Max.  
Thermal Resistance, Junction to Ambient, Max.  
1.4  
90  
oC/W  
©2011 Fairchild Semiconductor Corporation  
FDD7N60NZ / FDU7N60NZ Rev. C0  
1
www.fairchildsemi.com  

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