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FDD7N25LZTM PDF预览

FDD7N25LZTM

更新时间： 2024-11-07 11:10:03
品牌 Logo 应用领域
安森美 - ONSEMI 开关脉冲晶体管
页数 文件大小 规格书
9页 753K
描述
功率 MOSFET，N 沟道，UniFETTM，250 V，6.2A，550mΩ，DPAK

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中文翻译

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FDD7N25LZTM 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PSSO-G2Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：1 week风险等级：0.95
雪崩能效等级（Eas）：115 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：250 V
最大漏极电流 (Abs) (ID)：6.2 A最大漏极电流 (ID)：6.2 A
最大漏源导通电阻：0.57 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-252AAJESD-30 代码：R-PSSO-G2
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：2
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：56 W
最大脉冲漏极电流 (IDM)：25 A子类别：FET General Purpose Power
表面贴装：YES端子面层：Tin (Sn)
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

FDD7N25LZTM 数据手册

 浏览型号FDD7N25LZTM的Datasheet PDF文件第2页浏览型号FDD7N25LZTM的Datasheet PDF文件第3页浏览型号FDD7N25LZTM的Datasheet PDF文件第4页浏览型号FDD7N25LZTM的Datasheet PDF文件第5页浏览型号FDD7N25LZTM的Datasheet PDF文件第6页浏览型号FDD7N25LZTM的Datasheet PDF文件第7页 
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Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers  
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email any questions regarding the system integration to Fairchild_questions@onsemi.com.  
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