Datasheet > FDD7030BL

FDD7030BL

更新时间： 2024-11-22 17:15:19

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
6页	444K
描述
种类:N-Channel;漏源电压（Vdss）:30V;持续漏极电流（Id）（在25°C时）:56A;Vgs(th)(V):±20;漏源导通电阻:9.5mΩ@10V;漏源导通电阻:13mΩ@4.5V

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FDD7030BL 数据手册

FDD7030BL

30V N-Channel MOSFET

UMW

General Description

This N-Channel MOSFET has been designed

specifically to improve the overall efficiency of

DC/DC converters using either synchronous

or conventional switching PWM controllers. It

has been optimized for low gate charge, low

RDS( ON) , fast switching speed and

extremely low R_DS(ON)in a small package.

Applications

• DC/DC converter

• Motor Drives

Features

•

V_DS(V) = 30V

I_D=56A (V_GS= 10V)

R_DS(ON)<9.5mΩ (V _GS= 10V)

R_DS(ON)<13mΩ (V _GS= 4.5V)

•

• Low gate charge

• Fast Switching

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

Units

V_GSS

Gate-Source Voltage

Continuous Drain Current @T_C=25°C

@T_A=25°C

±20

I_D

(Note 3)

(Note 1a)

(Note 3)

100

Pulsed

P_D

Power Dissipation

@T_C=25°C

@T_A=25°C

(Note 1a)

(Note 1b)

2.8

1.3

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +175

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Case

(Note 1)

(Note 1a)

(Note 1b)

2.5

R_qJC

R_qJA

°C/W

Thermal Resistance, Junction-to-Ambient

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6

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