FDD7N20

更新时间： 2024-11-06 03:09:23

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
9页	343K
描述
N-Channel MOSFET

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中文翻译

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数据手册

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FDD7N20 数据手册

April 2007

UniFET

FDD7N20 / FDU7N20

N-Channel MOSFET

200V, 5A, 0.69Ω

Features

Description

•

R_DS(on)= 0.58Ω ( Typ. ) @ V_GS= 10V, I_D= 2.5A

Low gate charge( Typ. 5nC )

Low Crss ( Typ. 5pF )

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary, planar

stripe, DMOS technology.

This advanced technology has been especically tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the avalanche

and commutation mode. These devices are well suited for high

efficient switched mode power supplies and active power factor

correction.

Fast switching

100% avalanche tested

Improved dv/dt capability

RoHS compliant

I-PAK

FDU Series

D-PAK

FDD Series

MOSFET Maximum Ratings T_C= 25^oC unless otherwise noted

Symbol

V_DSS

V_GSS

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

200

±30

-Continuous (T_C= 25^oC)

-Continuous (T_C= 100^oC)

- P uls ed

I_D

D r a in C u r r e n t

I_DM

D rai n Cur rent

(Note 1)

(Note 2)

(Note 1)

(Note 3)

62.5

E_AS

I_AR

Single Pulsed Avalanche Energy

Avalanche Current

E_AR

dv/dt

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

4.3

V/ns

W/^oC

^oC

4.5

(T_C= 25^oC)

- Derate above 25^oC

P_D

Power Dissipation

0.34

-55 to +150

T_J, T_STG

T_L

Operating and Storage Temperature Range

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300

^oC

Thermal Characteristics

Symbol

Parameter

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

Ratings

2.9

Units

R_θJC

R_θJA

^oC/W

110

FDD7N20 / FDU7N20 Rev. A

www.fairchildsemi.com

12 3 4 5 6 7...9

中文翻译

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