FDD7030

更新时间： 2024-11-17 22:40:51

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
6页	127K
描述
30V N-Channel PowerTrench MOSFET

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中文翻译

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数据手册

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FDD7030 数据手册

June 2003

FDD7030BL/FDU7030BL

30V N-Channel PowerTrench^ÒMOSFET

General Description

Features

This N-Channel MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers. It has been optimized for

low gate charge, low RDS( ON) , fast switching speed and

extremely low R_DS(ON)in a small package.

56 A, 30 V

R_DS(ON)= 9.5 mW @ V_GS= 10 V

R_DS(ON)= 13 mW @ V_GS= 4.5 V

Low gate charge

Fast Switching

Applications

High performance trench technology for extremely

low R_DS(ON)

DC/DC converter

Motor Drives

I-PAK

(TO-251AA)

D-PAK

(TO-252)

TO-252

G D S

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

Units

V_GSS

Gate-Source Voltage

Continuous Drain Current @T_C=25°C

@T_A=25°C

±20

I_D

(Note 3)

(Note 1a)

(Note 3)

100

Pulsed

P_D

Power Dissipation

@T_C=25°C

@T_A=25°C

(Note 1a)

(Note 1b)

2.8

1.3

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +175

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Case

(Note 1)

(Note 1a)

(Note 1b)

2.5

R_qJC

R_qJA

°C/W

Thermal Resistance, Junction-to-Ambient

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

13’’

Tape width

Quantity

FDD7030BL

FDU7030BL

D-PAK (TO-252)

I-PAK (TO-251)

12mm

N/A

2500 units

FDU7030BL

Tube

FDD7030BL/FDU7030BL Rev CW)

Ó2003 Fairchild Semiconductor Corp.

12 3 4 5 6

中文翻译

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