FDD6N50

更新时间： 2024-11-18 03:06:27

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
9页	845K
描述
500V N-Channel MOSFET

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中文翻译

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数据手册

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FDD6N50 数据手册

January 2006

UniFET

FDD6N50/FDU6N50

500V N-Channel MOSFET

Features

Description

•

6A, 500V, R_DS(on)= 0.9Ω @V_GS= 10 V

Low gate charge ( typical 12.8 nC)

Low C_rss( typical 9 pF)

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary, planar

stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the avalanche

and commutation mode. These devices are well suited for high

efficient switched mode power supplies and active power factor

correction.

Fast switching

100% avalanche tested

Improved dv/dt capability

I-PAK

FDU Series

D-PAK

FDD Series

G D S

Absolute Maximum Ratings

Symbol

Parameter

FDD6N50/FDU6N50

Unit

V_DSS

Drain-Source Voltage

Drain Current

500

I_D

- Continuous (T_C= 25°C)

- Continuous (T_C= 100°C)

3.8

(Note 1)

(Note 2)

I_DM

Drain Current

- Pulsed

±30

270

V_GSS

E_AS

I_AR

Gate-Source voltage

Single Pulsed Avalanche Energy

Avalanche Current

(Note 1)

(Note 3)

E_AR

dv/dt

P_D

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

8.9

4.5

V/ns

Power Dissipation

(T_C= 25°C)

- Derate above 25°C

0.71

W/°C

T_J,T_STG

T_L

Operating and Storage Temperature Range

-55 to +150

300

°C

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

°C

Thermal Characteristics

Symbol

Parameter

Min.

Max.

1.4

Unit

°C/W

R_θJC

R_θJA

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

FDD6N50/FDU6N50 REV. A

www.fairchildsemi.com

12 3 4 5 6 7...9

中文翻译

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