Datasheet > FDD6N50TM-F085

FDD6N50TM-F085

更新时间： 2024-11-07 11:12:43

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
9页	1031K
描述
N 沟道，MOSFET，500V，6A，0.9Ω

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FDD6N50TM-F085 技术参数

是否无铅：	不含铅	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	1.64	配置：	Single
最大漏极电流 (Abs) (ID)：	6 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	89 W
子类别：	FET General Purpose Power	表面贴装：	YES

FDD6N50TM-F085 数据手册

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与FDD6N50TM-F085相关器件

型号	品牌	获取价格	描述	数据表
FDD6N50TM-WS	FAIRCHILD	获取价格	N-Channel UniFETTM MOSFET500 V, 6 A, 900 mÎ©
FDD6N50TM-WS	ONSEMI	获取价格	功率 MOSFET，N 沟道，UniFETTM，500 V，6 A，900 mΩ，DPAK
FDD6N50TU	FAIRCHILD	获取价格	Power Field-Effect Transistor, 6A I(D), 500V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal
FDD7030	FAIRCHILD	获取价格	30V N-Channel PowerTrench MOSFET
FDD7030BL	FAIRCHILD	获取价格	30V N-Channel PowerTrench MOSFET
FDD7030BL	UMW	获取价格	种类:N-Channel;漏源电压（Vdss）:30V;持续漏极电流（Id）（在25°C时
FDD770N15A	FAIRCHILD	获取价格	Power Field-Effect Transistor, 18A I(D), 150V, 0.077ohm, 1-Element, N-Channel, Silicon, Me
FDD770N15A	ONSEMI	获取价格	PowerTrench® MOSFET，N 沟道，150 V，18 A，77 mΩ
FDD7N20	FAIRCHILD	获取价格	N-Channel MOSFET
FDD7N20LZ	FAIRCHILD	获取价格	N-Channel UniFET MOSFET

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