FDD6N50F

更新时间： 2024-11-18 04:18:35

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
9页	354K
描述
N-Channel MOSFET 500V, 5.5A, 1.15ヘ

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FDD6N50F 数据手册

June 2007

UniFET^TM

FDD6N50F / FDU6N50F

N-Channel MOSFET

500V, 5.5A, 1.15Ω

Features

Description

•

R_DS(on)= 1.0Ω ( Typ.)@ V_GS= 10V, I_D= 2.75A

Low gate charge ( Typ. 15nC)

Low C_rss( Typ. 6.3pF)

These N-Channel enhancement mode power field effect

transistors are produced using Failchild’s proprietary, planar

stripe, DMOS technology.

This advance technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the avalanche

and commutation mode. These devices are well suited for high

efficient switched mode power supplies and active power factor

correction.

Fast switching

100% avalanche tested

Improved dv/dt capability

RoHS compliant

I-PAK

FDU Series

D-PAK

FDD Series

MOSFET Maximum Ratings T_C= 25^oC unless otherwise noted*

Symbol

V_DSS

V_GSS

Parameter

Ratings

500

Units

Drain to Source Voltage

Gate to Source Voltage

±30

-Continuous (T_C= 25^oC)

-Continuous (T_C= 100^oC)

- P uls ed

5.5

I_D

D r a in C u r r e n t

2.4

I_DM

D rai n Cur rent

(Note 1)

(Note 2)

(Note 1)

(Note 3)

E_AS

I_AR

Single Pulsed Avalanche Energy

Avalanche Current

270

5.5

E_AR

dv/dt

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

8.9

V/ns

W/^oC

^oC

4.5

(T_C= 25^oC)

- Derate above 25^oC

P_D

Power Dissipation

0.71

-55 to +150

T_J, T_STG

T_L

Operating and Storage Temperature Range

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300

^oC

Thermal Characteristics

Symbol

Parameter

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

Ratings

1.4

Units

R_θJC

R_θJA

^oC/W

*When mounted on the minimum pad size recommended (PCB Mount)

FDD6N50F / FDU6N50F Rev. A

www.fairchildsemi.com

12 3 4 5 6 7...9

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