FDD6N50TF

更新时间： 2024-09-16 04:18:35

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
9页	845K
描述
500V N-Channel MOSFET

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

FDD6N50TF 数据手册

January 2006

UniFET

FDD6N50/FDU6N50

500V N-Channel MOSFET

Features

Description

•

6A, 500V, R_DS(on)= 0.9Ω @V_GS= 10 V

Low gate charge ( typical 12.8 nC)

Low C_rss( typical 9 pF)

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary, planar

stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the avalanche

and commutation mode. These devices are well suited for high

efficient switched mode power supplies and active power factor

correction.

Fast switching

100% avalanche tested

Improved dv/dt capability

I-PAK

FDU Series

D-PAK

FDD Series

G D S

Absolute Maximum Ratings

Symbol

Parameter

FDD6N50/FDU6N50

Unit

V_DSS

Drain-Source Voltage

Drain Current

500

I_D

- Continuous (T_C= 25°C)

- Continuous (T_C= 100°C)

3.8

(Note 1)

(Note 2)

I_DM

Drain Current

- Pulsed

±30

270

V_GSS

E_AS

I_AR

Gate-Source voltage

Single Pulsed Avalanche Energy

Avalanche Current

(Note 1)

(Note 3)

E_AR

dv/dt

P_D

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

8.9

4.5

V/ns

Power Dissipation

(T_C= 25°C)

- Derate above 25°C

0.71

W/°C

T_J,T_STG

T_L

Operating and Storage Temperature Range

-55 to +150

300

°C

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

°C

Thermal Characteristics

Symbol

Parameter

Min.

Max.

1.4

Unit

°C/W

R_θJC

R_θJA

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

FDD6N50/FDU6N50 REV. A

www.fairchildsemi.com

12 3 4 5 6 7...9

中文翻译

下载PDF

FDD6N50TF 替代型号

型号	品牌	替代类型	描述	数据表
FDD6N50TM	FAIRCHILD	类似代替	500V N-Channel MOSFET
FDD6N50TM	ONSEMI	功能相似	功率 MOSFET，N 沟道，UniFETTM，500 V，6 A，900 mΩ，DPAK

与FDD6N50TF相关器件

型号	品牌	获取价格	描述	数据表
FDD6N50TM	ONSEMI	获取价格	功率 MOSFET，N 沟道，UniFETTM，500 V，6 A，900 mΩ，DPAK
FDD6N50TM	FAIRCHILD	获取价格	500V N-Channel MOSFET
FDD6N50TM_10	FAIRCHILD	获取价格	500V N-Channel MOSFET
FDD6N50TM_WS	FAIRCHILD	获取价格	Power Field-Effect Transistor, 6A I(D), 500V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal
FDD6N50TMF085	FAIRCHILD	获取价格	N-Channel UniFETTM MOSFET500 V, 6 A, 900 mÎ©
FDD6N50TM-F085	ONSEMI	获取价格	N 沟道，MOSFET，500V，6A，0.9Ω
FDD6N50TM-WS	FAIRCHILD	获取价格	N-Channel UniFETTM MOSFET500 V, 6 A, 900 mÎ©
FDD6N50TM-WS	ONSEMI	获取价格	功率 MOSFET，N 沟道，UniFETTM，500 V，6 A，900 mΩ，DPAK
FDD6N50TU	FAIRCHILD	获取价格	Power Field-Effect Transistor, 6A I(D), 500V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal
FDD7030	FAIRCHILD	获取价格	30V N-Channel PowerTrench MOSFET