型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FDD6N50TM_WS | FAIRCHILD |
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Power Field-Effect Transistor, 6A I(D), 500V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal | |
FDD6N50TMF085 | FAIRCHILD |
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N-Channel UniFETTM MOSFET500 V, 6 A, 900 mΩ | |
FDD6N50TM-F085 | ONSEMI |
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N 沟道,MOSFET,500V,6A,0.9Ω | |
FDD6N50TM-WS | FAIRCHILD |
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N-Channel UniFETTM MOSFET500 V, 6 A, 900 mΩ | |
FDD6N50TM-WS | ONSEMI |
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功率 MOSFET,N 沟道,UniFETTM,500 V,6 A,900 mΩ,DPAK | |
FDD6N50TU | FAIRCHILD |
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Power Field-Effect Transistor, 6A I(D), 500V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal | |
FDD7030 | FAIRCHILD |
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30V N-Channel PowerTrench MOSFET | |
FDD7030BL | FAIRCHILD |
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30V N-Channel PowerTrench MOSFET | |
FDD7030BL | UMW |
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种类:N-Channel;漏源电压(Vdss):30V;持续漏极电流(Id)(在25°C时 | |
FDD770N15A | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 18A I(D), 150V, 0.077ohm, 1-Element, N-Channel, Silicon, Me |