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FDD6N25TF PDF预览

FDD6N25TF

更新时间: 2024-11-18 04:18:35
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
9页 678K
描述
250V N-Channel MOSFET

FDD6N25TF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-252AA包装说明:SMALL OUTLINE, R-PSSO-G2
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.29
Is Samacsys:N其他特性:FAST SWITCHING
雪崩能效等级(Eas):45 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:250 V
最大漏极电流 (Abs) (ID):4.4 A最大漏极电流 (ID):4.4 A
最大漏源导通电阻:1.1 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252AAJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):50 W
最大脉冲漏极电流 (IDM):18 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FDD6N25TF 数据手册

 浏览型号FDD6N25TF的Datasheet PDF文件第2页浏览型号FDD6N25TF的Datasheet PDF文件第3页浏览型号FDD6N25TF的Datasheet PDF文件第4页浏览型号FDD6N25TF的Datasheet PDF文件第5页浏览型号FDD6N25TF的Datasheet PDF文件第6页浏览型号FDD6N25TF的Datasheet PDF文件第7页 
February 2007  
TM  
UniFET  
FDD6N25 / FDU6N25  
250V N-Channel MOSFET  
Features  
Description  
4.4A, 250V, RDS(on) = 1.1@VGS = 10 V  
Low gate charge ( typical 4.5 nC)  
Low Crss ( typical 5 pF)  
These N-Channel enhancement mode power field effect  
transistors are produced using Fairchild’s proprietary, planar  
stripe, DMOS technology.  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand high energy pulse in the avalanche  
and commutation mode. These devices are well suited for high  
efficient switched mode power supplies and active power factor  
correction.  
Fast switching  
100% avalanche tested  
Improved dv/dt capability  
D
D
G
I-PAK  
FDU Series  
D-PAK  
FDD Series  
G
S
G
D
S
S
Absolute Maximum Ratings  
Symbol  
Parameter  
FDD6N25 / FDU6N25  
Unit  
VDSS  
Drain-Source Voltage  
Drain Current  
250  
V
ID  
- Continuous (TC = 25°C)  
- Continuous (TC = 100°C)  
A
A
4.4  
2.6  
(Note 1)  
(Note 2)  
IDM  
Drain Current  
- Pulsed  
18  
±30  
45  
A
V
VGSS  
EAS  
IAR  
Gate-Source voltage  
Single Pulsed Avalanche Energy  
Avalanche Current  
mJ  
A
(Note 1)  
(Note 1)  
(Note 3)  
4.4  
5
EAR  
dv/dt  
PD  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
mJ  
V/ns  
4.5  
Power Dissipation  
(TC = 25°C)  
50  
W
- Derate above 25°C  
0.4  
W/°C  
T
J, TSTG  
Operating and Storage Temperature Range  
-55 to +150  
300  
°C  
TL  
Maximum Lead Temperature for Soldering Purpose,  
1/8” from Case for 5 Seconds  
°C  
Thermal Characteristics  
Symbol  
Parameter  
Typ  
--  
Max  
2.5  
Unit  
°C/W  
°C/W  
RθJC  
RθJA  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient  
--  
110  
©2007 Fairchild Semiconductor Corporation  
FDD6N25 / FDU6N25 Rev. A  
1
www.fairchildsemi.com  

FDD6N25TF 替代型号

型号 品牌 替代类型 描述 数据表
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