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FDD6N25 PDF预览

FDD6N25

更新时间: 2024-11-05 04:18:35
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飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
9页 678K
描述
250V N-Channel MOSFET

FDD6N25 数据手册

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February 2007  
TM  
UniFET  
FDD6N25 / FDU6N25  
250V N-Channel MOSFET  
Features  
Description  
4.4A, 250V, RDS(on) = 1.1@VGS = 10 V  
Low gate charge ( typical 4.5 nC)  
Low Crss ( typical 5 pF)  
These N-Channel enhancement mode power field effect  
transistors are produced using Fairchild’s proprietary, planar  
stripe, DMOS technology.  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand high energy pulse in the avalanche  
and commutation mode. These devices are well suited for high  
efficient switched mode power supplies and active power factor  
correction.  
Fast switching  
100% avalanche tested  
Improved dv/dt capability  
D
D
G
I-PAK  
FDU Series  
D-PAK  
FDD Series  
G
S
G
D
S
S
Absolute Maximum Ratings  
Symbol  
Parameter  
FDD6N25 / FDU6N25  
Unit  
VDSS  
Drain-Source Voltage  
Drain Current  
250  
V
ID  
- Continuous (TC = 25°C)  
- Continuous (TC = 100°C)  
A
A
4.4  
2.6  
(Note 1)  
(Note 2)  
IDM  
Drain Current  
- Pulsed  
18  
±30  
45  
A
V
VGSS  
EAS  
IAR  
Gate-Source voltage  
Single Pulsed Avalanche Energy  
Avalanche Current  
mJ  
A
(Note 1)  
(Note 1)  
(Note 3)  
4.4  
5
EAR  
dv/dt  
PD  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
mJ  
V/ns  
4.5  
Power Dissipation  
(TC = 25°C)  
50  
W
- Derate above 25°C  
0.4  
W/°C  
T
J, TSTG  
Operating and Storage Temperature Range  
-55 to +150  
300  
°C  
TL  
Maximum Lead Temperature for Soldering Purpose,  
1/8” from Case for 5 Seconds  
°C  
Thermal Characteristics  
Symbol  
Parameter  
Typ  
--  
Max  
2.5  
Unit  
°C/W  
°C/W  
RθJC  
RθJA  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient  
--  
110  
©2007 Fairchild Semiconductor Corporation  
FDD6N25 / FDU6N25 Rev. A  
1
www.fairchildsemi.com  

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