5秒后页面跳转
FDD6530A PDF预览

FDD6530A

更新时间: 2024-11-05 22:40:51
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
5页 83K
描述
20V N-Channel PowerTrench MOSFET

FDD6530A 数据手册

 浏览型号FDD6530A的Datasheet PDF文件第2页浏览型号FDD6530A的Datasheet PDF文件第3页浏览型号FDD6530A的Datasheet PDF文件第4页浏览型号FDD6530A的Datasheet PDF文件第5页 
July 2001  
FDD6530A  
20V N-Channel PowerTrenchÒ MOSFET  
General Description  
Features  
This N-Channel MOSFET has been designed  
specifically to improve the overall efficiency of DC/DC  
converters using either synchronous or conventional  
switching PWM controllers. It has been optimized for  
low gate charge, low RDS( ON) and fast switching speed.  
·
21 A, 20 V  
RDS(ON) = 32 mW @ VGS = 4.5 V  
RDS(ON) = 47 mW @ VGS = 2.5 V  
·
·
·
Low gate charge (6.5 nC typical)  
Fast switching  
Applications  
High performance trench technology for extremely  
low RDS(ON)  
·
·
DC/DC converter  
Motor drives  
.
D
D
G
G
S
TO-252  
S
Absolute Maximum Ratings TA=25oC unless otherwise noted  
Symbol  
VDSS  
Parameter  
Drain-Source Voltage  
Ratings  
Units  
20  
V
V
A
VGSS  
Gate-Source Voltage  
Drain Current – Continuous  
– Pulsed  
±8  
ID  
(Note 3)  
(Note 1a)  
(Note 1)  
21  
100  
PD  
W
Power Dissipation  
33  
(Note 1a)  
(Note 1b)  
3.3  
1.6  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
–55 to +175  
°C  
Thermal Characteristics  
Thermal Resistance, Junction-to-Case  
(Note 1)  
(Note 1a)  
(Note 1b)  
4.5  
45  
96  
RqJC  
RqJA  
RqJA  
°C/W  
°C/W  
°C/W  
Thermal Resistance, Junction-to-Ambient  
Thermal Resistance, Junction-to-Ambient  
Package Marking and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape width  
Quantity  
FDD6530A  
FDD6530A  
13’’  
16mm  
2500 units  
FDD6630A Rev C (W)  
Ó2001 Fairchild Semiconductor Corporation  

与FDD6530A相关器件

型号 品牌 获取价格 描述 数据表
FDD6530A_NL FAIRCHILD

获取价格

Power Field-Effect Transistor, 21A I(D), 20V, 0.032ohm, 1-Element, N-Channel, Silicon, Met
FDD6606 FAIRCHILD

获取价格

30V N-Channel PowerTrench MOSFET
FDD6606_NL FAIRCHILD

获取价格

Power Field-Effect Transistor, 75A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Met
FDD6612 FAIRCHILD

获取价格

N-Channel, Logic Level, PowerTrench⑩ MOSFET
FDD6612A FAIRCHILD

获取价格

30V N-Channel PowerTrench MOSFET
FDD6612A ONSEMI

获取价格

N 沟道,PowerTrench® MOSFET,30V,30A,20mΩ
FDD6612A_NL FAIRCHILD

获取价格

Power Field-Effect Transistor, 9.5A I(D), 30V, 0.02ohm, 1-Element, N-Channel, Silicon, Met
FDD6630A FAIRCHILD

获取价格

N-Channel PowerTrench⑩ MOSFET
FDD6630A ONSEMI

获取价格

N 沟道,PowerTrench® MOSFET,30V,21A,35mΩ
FDD6630A_11 FAIRCHILD

获取价格

30V N-Channel PowerTrenchÒ MOSFET