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FDD6635 PDF预览

FDD6635

更新时间: 2024-11-05 22:40:27
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
8页 150K
描述
35V N-Channel PowerTrench MOSFET

FDD6635 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:DPAK
包装说明:ROHS COMPLIANT, DPAK-3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.33
Is Samacsys:N其他特性:FAST SWITCHING
雪崩能效等级(Eas):113 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:35 V
最大漏极电流 (Abs) (ID):59 A最大漏极电流 (ID):15 A
最大漏源导通电阻:0.01 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252JESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):55 W
最大脉冲漏极电流 (IDM):100 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FDD6635 数据手册

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September 2005  
FDD6635  
35V N-Channel PowerTrench® MOSFET  
General Description  
Features  
This N-Channel MOSFET has been produced using  
Fairchild Semiconductor’s proprietary PowerTrench  
technology to deliver low Rdson and optimized Bvdss  
capability to offer superior performance benefit in the  
applications.  
59 A, 35 V  
RDS(ON) = 10 mΩ @ VGS = 10 V  
RDS(ON) = 13 mΩ @ VGS = 4.5 V  
Fast Switching  
RoHS compliant  
Applications  
Inverter  
Power Supplies  
D
D
G
G
S
D-PAK  
(TO-252)  
S
Absolute Maximum Ratings TA=25oC unless otherwise noted  
Symbol  
VDSS  
Parameter  
Drain-Source Voltage  
Ratings  
Units  
35  
V
V
V
A
VDS(Avalanche)  
VGSS  
Drain-Source Avalanche Voltage (maximum) (Note 4)  
Gate-Source Voltage  
40  
±20  
ID  
Continuous Drain Current @TC=25°C  
(Note 3)  
(Note 1a)  
(Note 1a)  
(Note 3)  
59  
@TA=25°C  
Pulsed  
15  
100  
PD  
W
Power Dissipation  
@TC=25°C  
@TA=25°C  
@TA=25°C  
55  
(Note 1a)  
(Note 1b)  
3.8  
1.6  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
–55 to +150  
°C  
Thermal Characteristics  
Thermal Resistance, Junction-to-Case  
(Note 1)  
(Note 1a)  
(Note 1b)  
2.7  
40  
96  
RθJC  
RθJA  
RθJA  
°C/W  
°C/W  
°C/W  
Thermal Resistance, Junction-to-Ambient  
Thermal Resistance, Junction-to-Ambient  
Package Marking and Ordering Information  
Device Marking  
Device  
Package  
Reel Size  
Tape width  
Quantity  
FDD6635  
FDD6635  
D-PAK (TO-252)  
13’’  
12mm  
2500 units  
©2005 Fairchild Semiconductor Corporation  
www.fairchildsemi.com  
FDD6635 Rev. C(W)  

FDD6635 替代型号

型号 品牌 替代类型 描述 数据表
FDD6635 ONSEMI

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N 沟道,PowerTrench® MOSFET,35V,59A,10mΩ

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