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FDD6637 PDF预览

FDD6637

更新时间: 2024-11-19 11:14:43
品牌 Logo 应用领域
安森美 - ONSEMI PC开关脉冲晶体管
页数 文件大小 规格书
10页 372K
描述
P 沟道,PowerTrench® MOSFET,35V,-55A,11.6mΩ

FDD6637 技术参数

是否无铅:不含铅生命周期:Active
包装说明:SMALL OUTLINE, R-PSSO-G2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
Factory Lead Time:10 weeks风险等级:0.94
Samacsys Confidence:4Samacsys Status:Released
Samacsys PartID:2449838Samacsys Pin Count:3
Samacsys Part Category:MOSFET (P-Channel)Samacsys Package Category:Other
Samacsys Footprint Name:DPAK3 (TO?252 3 LD) CASE 369AS ISSUE O_3Samacsys Released Date:2019-08-31 09:31:56
Is Samacsys:N雪崩能效等级(Eas):61 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:35 V最大漏极电流 (Abs) (ID):55 A
最大漏极电流 (ID):13 A最大漏源导通电阻:0.0116 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-252
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):57 W最大脉冲漏极电流 (IDM):100 A
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FDD6637 数据手册

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