是否无铅: | 不含铅 | 生命周期: | End Of Life |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | Reach Compliance Code: | not_compliant |
风险等级: | 5.2 | 其他特性: | ULTRA-LOW RESISTANCE |
雪崩能效等级(Eas): | 61 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 35 V |
最大漏极电流 (Abs) (ID): | 55 A | 最大漏极电流 (ID): | 21 A |
最大漏源导通电阻: | 0.0116 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-252 | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 175 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | P-CHANNEL | 最大功率耗散 (Abs): | 57 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | Tin (Sn) |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FDD6644 | FAIRCHILD |
获取价格 |
30V N-Channel PowerTrench MOSFET | |
FDD6644S | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 66A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Me | |
FDD6670 | FAIRCHILD |
获取价格 |
N-Channel, Logic Level, PowerTrench MOSFET | |
FDD6670A | FAIRCHILD |
获取价格 |
N-Channel, Logic Level, PowerTrench MOSFET | |
FDD6670A | ROCHESTER |
获取价格 |
15A, 30V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 | |
FDD6670A | ONSEMI |
获取价格 |
N 沟道,逻辑电平,PowerTrench® MOSFET,30V,66A,8mΩ | |
FDD6670A | UMW |
获取价格 |
种类:N-Channel;漏源电压(Vdss):30V;持续漏极电流(Id)(在25°C时 | |
FDD6670A_05 | FAIRCHILD |
获取价格 |
30V N-Channel PowerTrench MOSFET | |
FDD6670A_NL | ROCHESTER |
获取价格 |
15A, 30V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 | |
FDD6670A_NL | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 15A I(D), 30V, 0.008ohm, 1-Element, N-Channel, Silicon, Met |