是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | TO-252 |
包装说明: | DPAK-3 | 针数: | 3 |
Reach Compliance Code: | unknown | 风险等级: | 5.16 |
Is Samacsys: | N | 其他特性: | FAST SWITCHING |
雪崩能效等级(Eas): | 67 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (ID): | 15 A | 最大漏源导通电阻: | 0.008 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-252 |
JESD-30 代码: | R-PSSO-G2 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 100 A |
认证状态: | COMMERCIAL | 表面贴装: | YES |
端子面层: | MATTE TIN | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | 30 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FDD6670A_05 | FAIRCHILD |
获取价格 |
30V N-Channel PowerTrench MOSFET | |
FDD6670A_NL | ROCHESTER |
获取价格 |
15A, 30V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 | |
FDD6670A_NL | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 15A I(D), 30V, 0.008ohm, 1-Element, N-Channel, Silicon, Met | |
FDD6670AL | FAIRCHILD |
获取价格 |
30V N-Channel PowerTrench MOSFET | |
FDD6670AL_NL | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 84A I(D), 30V, 0.005ohm, 1-Element, N-Channel, Silicon, Met | |
FDD6670A-OLDDIE | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
FDD6670AS | FAIRCHILD |
获取价格 |
30V N-Channel PowerTrench SyncFET | |
FDD6670AS_NL | FAIRCHILD |
获取价格 |
30V N-Channel PowerTrench SyncFET | |
FDD6670S | FAIRCHILD |
获取价格 |
30V N-Channel PowerTrench SyncFET | |
FDD6670S_NL | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 64A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Met |