Datasheet > FDD6680AS

FDD6680AS

更新时间： 2024-11-21 17:15:43

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
7页	491K
描述
种类:N-Channel;漏源电压（Vdss）:30V;持续漏极电流（Id）（在25°C时）:50A;Vgs(th)(V):±20;漏源导通电阻:10.5mΩ@10V;漏源导通电阻:13mΩ@4.5V

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FDD6680AS 数据手册

FDD6680AS

30V N -Channel MOSFET

UMW

General Description

The FDD6680AS is designed to replace a single MOSFET and

Schottky diode in synchronous DC:DC power supplies.

This 30V MOSFET is designed to maximize power conversion

efficiency, providing

low R_DS(ON)and low gate charge.

The performance of

the FDD6680AS as the low-side switch in a

synchronous rectifier is indistinguishable from the performance of the

FDD6680A in parallel with a Schottky diode.

Applications

• DC/DC converter

• Low side notebook

Features

V_DS(V) = 30V

•

I_D=50A (V_GS= 10V)

R_DS(ON)< 10.5mΩ (V _GS= 5V)

R_DS(ON)< 13.0mΩ (V _GS= 4.5V)

• Includes SyncFET Schottky body diode

Low gate charge (21nC typical)

•

• High performance trench technology for extremely

low R_DS(ON)

• High power and current handling capability

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

Parameter

Ratings

Unit

V_DSS

V_GSS

I_D

Drain-Source Voltage

Gate-Source Voltage

±20

Drain Current – Continuous

– Pulsed

(Note 3)

(Note 1a)

(Note 1)

100

P_D

Power Dissipation

(Note 1a)

(Note 1b)

3.1

1.3

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Case

(Note 1)

(Note 1a)

(Note 1b)

2.1

R_θJC

R_θJA

°C/W

Thermal Resistance, Junction-to-Ambient

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7

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与FDD6680AS相关器件

型号	品牌	获取价格	描述	数据表
FDD6680AS_08	FAIRCHILD	获取价格	30V N-Channel PowerTrench㈢ SyncFET⑩
FDD6680AS_NL	FAIRCHILD	获取价格	30V N-Channel PowerTrench SyncFET
FDD6680S	FAIRCHILD	获取价格	30V N-Channel PowerTrench SyncFET⑩
FDD6680S	ROCHESTER	获取价格	55A, 30V, 0.011ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3
FDD6680S_NL	FAIRCHILD	获取价格	Power Field-Effect Transistor, 55A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Met
FDD6682	FAIRCHILD	获取价格	30V N-Channel PowerTrench MOSFET
FDD6682_NL	FAIRCHILD	获取价格	Power Field-Effect Transistor, 75A I(D), 30V, 0.0062ohm, 1-Element, N-Channel, Silicon, Me
FDD6685	FAIRCHILD	获取价格	30V P-Channel PowerTrench MOSFET
FDD6685	ONSEMI	获取价格	30V，P 沟道，PowerTrench® MOSFET，-40A，20mΩ
FDD6685	UMW	获取价格	种类:P-Channel;漏源电压（Vdss）:-30V;持续漏极电流（Id）（在25°C