Datasheet > FDD6676AS

FDD6676AS

更新时间： 2024-11-18 17:15:39

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
6页	431K
描述
种类:N-Channel;漏源电压（Vdss）:30V;持续漏极电流（Id）（在25°C时）:90A;Vgs(th)(V):±20;漏源导通电阻:5.7mΩ@10V;漏源导通电阻:7.1mΩ@4.5V

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数据手册

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FDD6676AS 数据手册

FDD6676AS

30V N-Channel MOSFET

UMW

Applications

• DC/DC converter

• Low side notebook

Features

•

V_DS(V) = 30V

I_D= 90A (V_GS= 10V)

R_DS(ON)<5.7mΩ (V _GS= 10V)

R_DS(ON)<7.1mΩ (V _GS= 4.5V)

•

Low gate charge (46nC typical)

• High power and current handling capability

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

Units

V_GSS

Gate-Source Voltage

±20

I_D

Drain Current – Continuous

– Pulsed

(Note 3)

(Note 1a)

(Note 1)

100

P_D

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

3.1

1.3

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Case

(Note 1)

(Note 1a)

(Note 1b)

1.8

R_θJC

R_θJA

°C/W

Thermal Resistance, Junction-to-Ambient

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6

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与FDD6676AS相关器件

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FDD6676AS_NL	FAIRCHILD	获取价格	30V N-Channel PowerTrench SyncFET
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FDD6680_NL	FAIRCHILD	获取价格	Power Field-Effect Transistor, 12A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Meta
FDD6680A	FAIRCHILD	获取价格	N-Channel, Logic Level, PowerTrench MOSFET
FDD6680A_NL	FAIRCHILD	获取价格	Power Field-Effect Transistor, 14A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Me
FDD6680AS	FAIRCHILD	获取价格	30V N-Channel PowerTrench SyncFET
FDD6680AS	ONSEMI	获取价格	N 沟道，PowerTrench® SyncFET™ MOSFET，30V，55A，10.
FDD6680AS	UMW	获取价格	种类:N-Channel;漏源电压（Vdss）:30V;持续漏极电流（Id）（在25°C时
FDD6680AS_08	FAIRCHILD	获取价格	30V N-Channel PowerTrench㈢ SyncFET⑩