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FDD6676A PDF预览

FDD6676A

更新时间: 2024-11-20 21:55:11
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
8页 120K
描述
30V N-Channel PowerTrench SyncFET

FDD6676A 数据手册

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April 2005  
FDD6676AS  
30V N-Channel PowerTrench® SyncFET™  
General Description  
Features  
The FDD6676AS is designed to replace a single  
MOSFET and Schottky diode in synchronous DC:DC  
power supplies. This 30V MOSFET is designed to  
maximize power conversion efficiency, providing a low  
90 A, 30 V  
RDS(ON) = 5.7 m@ VGS = 10 V  
RDS(ON) = 7.1 m@ VGS = 4.5 V  
Includes SyncFET schottky body diode  
Low gate charge (46nC typical)  
RDS(ON)  
includes  
and low gate charge.  
The FDD6676AS  
MOSFET  
a
patented combination of a  
monolithically integrated with a Schottky diode using  
Fairchild’s monolithic SyncFET technology.  
High performance trench technology for extremely  
Applications  
low RDS(ON)  
DC/DC converter  
Low side notebook  
High power and current handling capability  
D
D
G
G
S
D-PAK  
(TO-252)  
S
Absolute Maximum Ratings TA=25oC unless otherwise noted  
Symbol  
VDSS  
Parameter  
Drain-Source Voltage  
Ratings  
Units  
30  
V
V
A
VGSS  
Gate-Source Voltage  
±20  
ID  
Drain Current – Continuous  
– Pulsed  
(Note 3)  
(Note 1a)  
(Note 1)  
90  
100  
PD  
W
Power Dissipation for Single Operation  
70  
(Note 1a)  
(Note 1b)  
3.1  
1.3  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
–55 to +150  
°C  
Thermal Characteristics  
Thermal Resistance, Junction-to-Case  
(Note 1)  
(Note 1a)  
(Note 1b)  
1.8  
40  
96  
RθJC  
RθJA  
RθJA  
°C/W  
°C/W  
°C/W  
Thermal Resistance, Junction-to-Ambient  
Thermal Resistance, Junction-to-Ambient  
Package Marking and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape width  
Quantity  
FDD6676AS  
FDD6676AS  
13’’  
12mm  
12mm  
2500 units  
2500 units  
FDD6676AS  
FDD6676AS_NL (Note 4)  
13’’  
FDD6676AS Rev A(X)  
©2005 Fairchild Semiconductor Corporation  

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