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FDD6690 PDF预览

FDD6690

更新时间: 2024-11-19 22:19:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
6页 118K
描述
N-Channel, Logic Level, PowerTrenchTM MOSFET

FDD6690 数据手册

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July 2003  
FDD6690A  
30V N-Channel PowerTrenchÒ MOSFET  
General Description  
Features  
This N-Channel MOSFET is produced using Fairchild  
Semiconductor’s advanced PowerTrench process that  
has been especially tailored to minimize the on state  
resistance and yet maintain low gate charge for  
superior switching performance.  
·
46 A, 30 V  
RDS(ON) = 12 mW @ VGS = 10 V  
RDS(ON) = 14 mW @ VGS = 4.5 V  
·
·
·
Low gate charge  
Fast Switching Speed  
Applications  
·
·
DC/DC converter  
Motor Drives  
High performance trench technology for extremely  
low RDS(ON)  
D
D
G
G
S
D-PAK  
(TO-252)  
S
Absolute Maximum Ratings TA=25oC unless otherwise noted  
Symbol  
VDSS  
Parameter  
Drain-Source Voltage  
Ratings  
Units  
30  
V
V
A
VGSS  
Gate-Source Voltage  
Continuous Drain Current @TC=25°C  
@TA=25°C  
±20  
ID  
(Note 3)  
(Note 1a)  
(Note 1a)  
(Note 3)  
46  
12  
100  
Pulsed  
PD  
W
Power Dissipation  
@TC=25°C  
@TA=25°C  
@TA=25°C  
56  
(Note 1a)  
(Note 1b)  
3.3  
1.5  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
–55 to +175  
°C  
Thermal Characteristics  
Thermal Resistance, Junction-to-Case  
(Note 1)  
(Note 1a)  
(Note 1b)  
2.7  
45  
96  
RqJC  
RqJA  
RqJA  
°C/W  
Thermal Resistance, Junction-to-Ambient  
Package Marking and Ordering Information  
Device Marking  
Device  
Package  
Reel Size  
Tape width  
12mm  
Quantity  
FDD6690A  
FDD6690A  
D-PAK (TO-252)  
13’’  
2500 units  
FDD6690A Rev EW)  
Ó2003 Fairchild Semiconductor Corp.  

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