FDD6770A

更新时间： 2024-09-15 06:59:07

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
6页	315K
描述
N-Channel PowerTrench® MOSFET 25 V, 4.0 mΩ

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FDD6770A 数据手册

January 2009

FDD6770A

N-Channel PowerTrench^®MOSFET

25 V, 4.0 mΩ

Features

General Description

This N-Channel MOSFET has been designed specifically to

improve the overall efficiency of DC/DC converters using either

synchronous or conventional switching PWM controllers. It has

been optimized for low gate charge, low r_DS(on)and fast

switching speed.

Max r_DS(on)= 4.0 mΩ at V_GS= 10 V, I_D= 24 A

Max r_DS(on)= 8.0 mΩ at V_GS= 4.5 V, I_D= 18.4 A

100% UIL tested

RoHS Compliant

Applications

Vcore DC-DC for Desktop Computers and Servers

VRM for Intermediate Bus Architecture

D-PAK

TO-252

(TO-252)

MOSFET Maximum Ratings T_C= 25 °C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

±20

Drain Current -Continuous (Package limited)

-Continuous (Silicon limited)

-Continuous

T_C= 25 °C

_C= 25 °C

I_D

T_A= 25 °C

(Note 1a)

(Note 3)

(Note 1a)

200

-Pulsed

E_AS

Single Pulse Avalanche Energy

Power Dissipation

T_C= 25 °C

T_A= 25 °C

P_D

Power Dissipation

3.7

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +175

°C

Thermal Characteristics

R_θJC

R_θJA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

3.0

°C/W

(Note 1a)

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

13 ’’

Tape Width

12 mm

Quantity

FDD6770A

D-PAK (TO-252)

2500 units

FDD6770A Rev.C

www.fairchildsemi.com

12 3 4 5 6

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