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FDD6770A PDF预览

FDD6770A

更新时间: 2024-11-18 06:59:07
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
6页 315K
描述
N-Channel PowerTrench® MOSFET 25 V, 4.0 mΩ

FDD6770A 数据手册

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January 2009  
FDD6770A  
N-Channel PowerTrench® MOSFET  
25 V, 4.0 mΩ  
Features  
General Description  
This N-Channel MOSFET has been designed specifically to  
improve the overall efficiency of DC/DC converters using either  
synchronous or conventional switching PWM controllers. It has  
been optimized for low gate charge, low rDS(on) and fast  
switching speed.  
„ Max rDS(on) = 4.0 mat VGS = 10 V, ID = 24 A  
„ Max rDS(on) = 8.0 mat VGS = 4.5 V, ID = 18.4 A  
„ 100% UIL tested  
„ RoHS Compliant  
Applications  
„ Vcore DC-DC for Desktop Computers and Servers  
„ VRM for Intermediate Bus Architecture  
D
D
G
G
S
D-PAK  
(TO-252)  
S
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted  
Symbol  
VDS  
VGS  
Parameter  
Ratings  
Units  
Drain to Source Voltage  
Gate to Source Voltage  
25  
V
V
±20  
Drain Current -Continuous (Package limited)  
-Continuous (Silicon limited)  
-Continuous  
TC = 25 °C  
C = 25 °C  
50  
T
97  
ID  
A
TA = 25 °C  
(Note 1a)  
(Note 3)  
(Note 1a)  
24  
200  
-Pulsed  
EAS  
Single Pulse Avalanche Energy  
Power Dissipation  
50  
mJ  
W
TC = 25 °C  
TA = 25 °C  
50  
PD  
Power Dissipation  
3.7  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
-55 to +175  
°C  
Thermal Characteristics  
RθJC  
RθJA  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
3.0  
40  
°C/W  
(Note 1a)  
Package Marking and Ordering Information  
Device Marking  
Device  
Package  
Reel Size  
13 ’’  
Tape Width  
12 mm  
Quantity  
FDD6770A  
FDD6770A  
D-PAK (TO-252)  
2500 units  
©2009 Fairchild Semiconductor Corporation  
FDD6770A Rev.C  
www.fairchildsemi.com  
1

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